Presentation | 2003/4/8 Low Temperature Fabrication of High-Quality Insulating Films by Using ECR Plasma Hiroshi NAKASHIMA, Junli WANG, Liwei ZHAO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report on the fabrication of high-quality insulating films at low temperature by using ECR plasma, which shows high breakdown filed and low interface states. Also SiON films deposited by ECR sputtering shows low stress, which is suitable for the passivation of organic EL devices. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ECR / SiO_2 / SiON / organic passivation film for organic EL devices |
Paper # | ED2003-11,SDM2003-11,OME2003-11 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2003/4/8(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low Temperature Fabrication of High-Quality Insulating Films by Using ECR Plasma |
Sub Title (in English) | |
Keyword(1) | ECR |
Keyword(2) | SiO_2 |
Keyword(3) | SiON |
Keyword(4) | organic passivation film for organic EL devices |
1st Author's Name | Hiroshi NAKASHIMA |
1st Author's Affiliation | Advanced Sci. and Tech. Ceter for Cooperative Research, Kyushu Univ.() |
2nd Author's Name | Junli WANG |
2nd Author's Affiliation | Advanced Sci. and Tech. Ceter for Cooperative Research, Kyushu Univ. |
3rd Author's Name | Liwei ZHAO |
3rd Author's Affiliation | Advanced Sci. and Tech. Ceter for Cooperative Research, Kyushu Univ. |
Date | 2003/4/8 |
Paper # | ED2003-11,SDM2003-11,OME2003-11 |
Volume (vol) | vol.103 |
Number (no) | 6 |
Page | pp.pp.- |
#Pages | 5 |
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