Presentation 2003/4/8
Low Temperature Fabrication of High-Quality Insulating Films by Using ECR Plasma
Hiroshi NAKASHIMA, Junli WANG, Liwei ZHAO,
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Abstract(in English) We report on the fabrication of high-quality insulating films at low temperature by using ECR plasma, which shows high breakdown filed and low interface states. Also SiON films deposited by ECR sputtering shows low stress, which is suitable for the passivation of organic EL devices.
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Keyword(in English) ECR / SiO_2 / SiON / organic passivation film for organic EL devices
Paper # ED2003-11,SDM2003-11,OME2003-11
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Committee SDM
Conference Date 2003/4/8(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Temperature Fabrication of High-Quality Insulating Films by Using ECR Plasma
Sub Title (in English)
Keyword(1) ECR
Keyword(2) SiO_2
Keyword(3) SiON
Keyword(4) organic passivation film for organic EL devices
1st Author's Name Hiroshi NAKASHIMA
1st Author's Affiliation Advanced Sci. and Tech. Ceter for Cooperative Research, Kyushu Univ.()
2nd Author's Name Junli WANG
2nd Author's Affiliation Advanced Sci. and Tech. Ceter for Cooperative Research, Kyushu Univ.
3rd Author's Name Liwei ZHAO
3rd Author's Affiliation Advanced Sci. and Tech. Ceter for Cooperative Research, Kyushu Univ.
Date 2003/4/8
Paper # ED2003-11,SDM2003-11,OME2003-11
Volume (vol) vol.103
Number (no) 6
Page pp.pp.-
#Pages 5
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