Presentation 2003/4/8
Orientation Control of Poly(di-methyl silane) Thin Film Prepared By Vacuum Evaporation Method
Hidetaka OHTA, Shoji FURUKAWA,
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Abstract(in English) Poly(di-methyl silane) thin films have been prepared by vacuum evaporation technique. In the previous study, it was found that the oriented film can be obtained on Si(100) wafer substrate at high substrate temperature. Moreover, the molecular orientation can be controlled by changing evaporation pressure. The temperature of the substrate was held constant at 100℃. In this paper, we have prepared the oriented film on the Si(100) substrate as well as the quartz glass substrate. We also investigated the effect of the distance between the substrate and the source on the structure of the film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Organopolysilane / Poly(di-methyl silane) / Vacuum Evaporation Method / Orientation Control
Paper # ED2003-10,SDM2003-10,OME2003-10
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Committee SDM
Conference Date 2003/4/8(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Orientation Control of Poly(di-methyl silane) Thin Film Prepared By Vacuum Evaporation Method
Sub Title (in English)
Keyword(1) Organopolysilane
Keyword(2) Poly(di-methyl silane)
Keyword(3) Vacuum Evaporation Method
Keyword(4) Orientation Control
1st Author's Name Hidetaka OHTA
1st Author's Affiliation Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology:CREST Japan Science and Technology Corporation()
2nd Author's Name Shoji FURUKAWA
2nd Author's Affiliation Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology:CREST Japan Science and Technology Corporation
Date 2003/4/8
Paper # ED2003-10,SDM2003-10,OME2003-10
Volume (vol) vol.103
Number (no) 6
Page pp.pp.-
#Pages 6
Date of Issue