Presentation 2004/1/9
Low Noise Balanced-CMOS Technology Formed on Si(110) Surface
Akinobu TERAMOTO, Tatsufumi HAMADA, Hiroshi AKAHORI, Keiichi NII, Koji KOTANI, Tadahiro OHMI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper demonstrated the CMOS characteristics on Si(110) surface by using surface flattening process and radical oxidation. By forming a MOS device on Si(110) surface, the high-speed and low 1/f noise p-MOSFET can be realized. Furthermore, the current drivability of p-MOS and n-MOS has balanced in the CMOS (balanced CMOS) on Si(110) surface can be also realized. These are very useful to the analog/digital mixed signal circuits.
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Keyword(in English) Silicon / Orientation / mobility / micro-roughness / Balanced-CMOS / noise
Paper # SDM2003-205
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Committee SDM
Conference Date 2004/1/9(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Noise Balanced-CMOS Technology Formed on Si(110) Surface
Sub Title (in English)
Keyword(1) Silicon
Keyword(2) Orientation
Keyword(3) mobility
Keyword(4) micro-roughness
Keyword(5) Balanced-CMOS
Keyword(6) noise
1st Author's Name Akinobu TERAMOTO
1st Author's Affiliation New Industry Hatchery Center, Tohoku University()
2nd Author's Name Tatsufumi HAMADA
2nd Author's Affiliation Graduate School of Engineering, Tohoku University
3rd Author's Name Hiroshi AKAHORI
3rd Author's Affiliation New Industry Hatchery Center, Tohoku University:Graduate School of Engineering, Tohoku University
4th Author's Name Keiichi NII
4th Author's Affiliation New Industry Hatchery Center, Tohoku University
5th Author's Name Koji KOTANI
5th Author's Affiliation Graduate School of Engineering, Tohoku University
6th Author's Name Tadahiro OHMI
6th Author's Affiliation New Industry Hatchery Center, Tohoku University
Date 2004/1/9
Paper # SDM2003-205
Volume (vol) vol.103
Number (no) 556
Page pp.pp.-
#Pages 4
Date of Issue