| Presentation | 2003/12/12 Control of Electronic Charging of Silicon-Quantum-Dots and its Application to Floating Gate MOS Devices Seiichi Miyazaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have prepared nanometer-size Si dots with and without Ge core in a self-assembling manner by controlling the early stages in low pressure chemical vapor deposition on thermally-grown SiO_2. We have evaluated the surface potential change of each of Si dots due to charging or discharging one electron or a few by an AFM/Kelvin probe technique and demonstrated that, for dots consisting of Si clad and Ge core, electrons are stably stored in Si clad while holes in Ge core. Multiple-step electronic charging and discharging characteristics of Si quantum-dots (Si-QDs) floating gates in the MOS capacitors and MOSFETs have been studied in the temperature range of 200～350K. The temporal change in the drain current at a constant gate bias after complete discharging in the Si-QDs floating gate shows specific step wise reductions accompanied with metastable states in which the drain current also remain unchanged with time until the next quick current reduction. The result indicates that, in the metastable states, injected electrons redistribute in the Si-QDs floating gate with keeping the effective total charge density in the floating gate, and suggests that the Coulomb interaction among electrons stored in neighboring dots plays an important role on the step wise behavior in electron charging. From the slope of Arrehnius plots of the time for both each electron injection and metastable state, it is likely that a thermal activation process with an energy of 0.3eV is involved in the electron charging to the Si-QDs floating gate. The activation energy (0.3eV) suggests the electron tunneling between different energy states among neighboring Si-QDs, considering the charging energy and quantization energy in Si-QDs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon dot / quantum dot / floating gate memory / MOS / Coulomb blockade / Kelvin probe |
| Paper # | SDM2003-195(2003-12) |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of Electronic Charging of Silicon-Quantum-Dots and its Application to Floating Gate MOS Devices |
| Sub Title (in English) | |
| Keyword(1) | silicon dot |
| Keyword(2) | quantum dot |
| Keyword(3) | floating gate memory |
| Keyword(4) | MOS |
| Keyword(5) | Coulomb blockade |
| Keyword(6) | Kelvin probe |
| 1st Author's Name | Seiichi Miyazaki |
| 1st Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Science and Matter, Hiroshima University() |
| Date | 2003/12/12 |
| Paper # | SDM2003-195(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |