| Presentation | 2003/12/12 Floating Gate Memory with Si Quantum Dot : Electron implantation into Si nano dot with PECVD method Junko IKAI, Takio HIKONO, Yukiharu URAOKA, Takashi FUYUKI, Hiroya KIRIMURA, Kenji KATO, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon dot was fabricated by new PECVD method. In order to observe the quantum effect, dot was fabricated on thermal oxide with thickness of 3nm, control oxide was deposited by PECVD without the atmospheric exposure. Diameter of the dot was 5-11nm, and density was 7.3×10^<11>cm^<-2>. Hysterisis curve indicating charging and discharging phenomena was observed. From the analysis of frequency and delay time dependence, it was considered that the electron was confined in the Si dot not in the traps. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si quantum dot / Floating Gate / PECVD / Single-electron device / Quantum-effect |
| Paper # | SDM2003-193(2003-12) |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Floating Gate Memory with Si Quantum Dot : Electron implantation into Si nano dot with PECVD method |
| Sub Title (in English) | |
| Keyword(1) | Si quantum dot |
| Keyword(2) | Floating Gate |
| Keyword(3) | PECVD |
| Keyword(4) | Single-electron device |
| Keyword(5) | Quantum-effect |
| 1st Author's Name | Junko IKAI |
| 1st Author's Affiliation | Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST)() |
| 2nd Author's Name | Takio HIKONO |
| 2nd Author's Affiliation | Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST) |
| 3rd Author's Name | Yukiharu URAOKA |
| 3rd Author's Affiliation | Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST) |
| 4th Author's Name | Takashi FUYUKI |
| 4th Author's Affiliation | Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST) |
| 5th Author's Name | Hiroya KIRIMURA |
| 5th Author's Affiliation | NISSIN ELECTRIC CO.,LTD. Process Research Center R&D LABORATORIES |
| 6th Author's Name | Kenji KATO |
| 6th Author's Affiliation | NISSIN ELECTRIC CO.,LTD. Process Research Center R&D LABORATORIES |
| Date | 2003/12/12 |
| Paper # | SDM2003-193(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |