Presentation 2003/12/12
Photoinduced Effects on Single-Charge Tunneling in a Silicon Multidot Structure
Hiroya IKEDA, Ratno NURYADI, Yasuhiko ISHIKAWA, Michiharu TABE,
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Abstract(in English) We have investigated the illumination effects on Coulomb blockade (CB) characteristics of Si two-dimensional multi-dot field-effect transistors. Some of the transistors exhibit remarkable changes in their CB characteristics for single-hole tunneling by the illumination, i.e., the generation of a new Coulomb oscillation peak and/or the gate-voltage shift. The photoinduced phenomena can be commonly explained by a model that the light illumination supplies an additional electron to a dot adjacent to the CB current percolation path. Monte Carlo simulation for an equivalent circuit based on the above model can reproduce the experimental characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum Multidot / Illumination Effect / Single Hole Tunneling / Coulomb Oscillation / Monte Carlo Simulation
Paper # SDM2003-192(2003-12)
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Committee SDM
Conference Date 2003/12/12(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Photoinduced Effects on Single-Charge Tunneling in a Silicon Multidot Structure
Sub Title (in English)
Keyword(1) Quantum Multidot
Keyword(2) Illumination Effect
Keyword(3) Single Hole Tunneling
Keyword(4) Coulomb Oscillation
Keyword(5) Monte Carlo Simulation
1st Author's Name Hiroya IKEDA
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Ratno NURYADI
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Yasuhiko ISHIKAWA
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Michiharu TABE
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2003/12/12
Paper # SDM2003-192(2003-12)
Volume (vol) vol.103
Number (no) 533
Page pp.pp.-
#Pages 5
Date of Issue