Presentation | 2003/12/12 Photoinduced Effects on Single-Charge Tunneling in a Silicon Multidot Structure Hiroya IKEDA, Ratno NURYADI, Yasuhiko ISHIKAWA, Michiharu TABE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have investigated the illumination effects on Coulomb blockade (CB) characteristics of Si two-dimensional multi-dot field-effect transistors. Some of the transistors exhibit remarkable changes in their CB characteristics for single-hole tunneling by the illumination, i.e., the generation of a new Coulomb oscillation peak and/or the gate-voltage shift. The photoinduced phenomena can be commonly explained by a model that the light illumination supplies an additional electron to a dot adjacent to the CB current percolation path. Monte Carlo simulation for an equivalent circuit based on the above model can reproduce the experimental characteristics. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Quantum Multidot / Illumination Effect / Single Hole Tunneling / Coulomb Oscillation / Monte Carlo Simulation |
Paper # | SDM2003-192(2003-12) |
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Committee | SDM |
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Conference Date | 2003/12/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Photoinduced Effects on Single-Charge Tunneling in a Silicon Multidot Structure |
Sub Title (in English) | |
Keyword(1) | Quantum Multidot |
Keyword(2) | Illumination Effect |
Keyword(3) | Single Hole Tunneling |
Keyword(4) | Coulomb Oscillation |
Keyword(5) | Monte Carlo Simulation |
1st Author's Name | Hiroya IKEDA |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | Ratno NURYADI |
2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
3rd Author's Name | Yasuhiko ISHIKAWA |
3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
4th Author's Name | Michiharu TABE |
4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
Date | 2003/12/12 |
Paper # | SDM2003-192(2003-12) |
Volume (vol) | vol.103 |
Number (no) | 533 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |