Presentation 2003/12/12
Device Simulation of Photo Electrode in Silicon Interface by Nano-Scale Control
Toshiki YAGI, Yukiharu URAOKA, Takashi FUYUKI,
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Abstract(in English) It is very important to understand the behavior of photo electrode in photoelectrochemical cell which is basic part in water decomposition devices. In order to optimize the part of photo electrode, we performed two dimensional device simulation. For that part, we proposed a Schottky model consisted with nona-scale Pt on Si surface. Electric performance was analyzed with the variation of size or interval of electrode using device simulator. Further, we discussed the case when the band structure in the device surface was varied. Results obtained by this analysis suggested that band variation in the device surface is very useful for an open circuit voltage.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Photoelectrochemical cell / Silicon / nano / Platinum / Schottky / 2-D simulation
Paper # SDM2003-191(2003-12)
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Committee SDM
Conference Date 2003/12/12(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Device Simulation of Photo Electrode in Silicon Interface by Nano-Scale Control
Sub Title (in English)
Keyword(1) Photoelectrochemical cell
Keyword(2) Silicon
Keyword(3) nano
Keyword(4) Platinum
Keyword(5) Schottky
Keyword(6) 2-D simulation
1st Author's Name Toshiki YAGI
1st Author's Affiliation Materials Science, Nara Institute of Science and Technology()
2nd Author's Name Yukiharu URAOKA
2nd Author's Affiliation Materials Science, Nara Institute of Science and Technology
3rd Author's Name Takashi FUYUKI
3rd Author's Affiliation Materials Science, Nara Institute of Science and Technology
Date 2003/12/12
Paper # SDM2003-191(2003-12)
Volume (vol) vol.103
Number (no) 533
Page pp.pp.-
#Pages 5
Date of Issue