| Presentation | 2003/12/12 4H-SIC MOSFETs with a Novel Channel Structure (SC-MOSFET) Junji Kaido, Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 4H-S1C MOSFETs with a novel channel structure are presented. In the novel MOSFETs, a buried n-channel is sandwiched by a thin p-layer and p-body (SC-MOSFET). By the introduction of properly-designed p-layer beneath the gate oxide, more electrons can travel apart from the MOS interface, leading to higher channel mobility especially at high gate voltage. In this study, the effects of channel structure on the 4H-SiC (0001) MOSFET performance are investigated, and the characteristics of inversion-type MOSFET, buried channel MOSFET and SC-MOSFET were compared. The SC-MOSFET, processed by N_2O oxidation, with a 0.10μm-thick channel showed a high mobility of 40cm^2/Vs with a normally-off characteristic at a gate oxide field of 2.5MV/cm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon carbide / MOSFET / buried channel / channel mobility |
| Paper # | SDM2003-190(2003-12) |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 4H-SIC MOSFETs with a Novel Channel Structure (SC-MOSFET) |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | MOSFET |
| Keyword(3) | buried channel |
| Keyword(4) | channel mobility |
| 1st Author's Name | Junji Kaido |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Tsunenobu Kimoto |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Jun Suda |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Hiroyuki Matsunami |
| 4th Author's Affiliation | kaidouDepartment of Electronic Science and Engineering, Kyoto University |
| Date | 2003/12/12 |
| Paper # | SDM2003-190(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |