| Presentation | 2003/12/12 Design and Fabrication of High-Voltage SiC RESURF MOSFETs Tsunenobu Kimoto, Hajime Kosugi, Yohsuke Kanzaki, Jun Suda, Hiroyuki Matsunami, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Design and fabrication of lateral SiC RESURF (REduced SURface Field) MOSFETs have been investigated. The average inversion-channel mobility was 17,38, and 57cm^2/Vs for 4H-SiC(0001), (1120), and 6H-SiC(0001) MOSFETs, respectively. The doping concentration and thickness of the RESURF and LDD (lightly-doped drain) regions were optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. RESURF MOSFETs with an inversion channel were fabricated on 10 pim-thick p-type 4H-SiC(0001), (11-20), and 6H-SiC(0001) epilayers with an acceptor concentration of 1.2～1.5x10^<16>cm^<-3>. A 6H-SiC(0001) RESURF MOSFET with a 3μm channel length exhibited a high breakdown voltage of 1620 V, and an on-resistance of 242 mΩcm^2. A 4H-SiC(1120) RESURF MOSFET showed the chracteristics of 1230V-160mΩcm^2. The breakdown voltage (1620V) is the highest ever reported for SiC RESURF MOSFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / MOSFET / Power Device / RESURF / Device Simulation |
| Paper # | SDM2003-189(2003-12) |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design and Fabrication of High-Voltage SiC RESURF MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | MOSFET |
| Keyword(3) | Power Device |
| Keyword(4) | RESURF |
| Keyword(5) | Device Simulation |
| 1st Author's Name | Tsunenobu Kimoto |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Hajime Kosugi |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Yohsuke Kanzaki |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Jun Suda |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 5th Author's Name | Hiroyuki Matsunami |
| 5th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2003/12/12 |
| Paper # | SDM2003-189(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |