| Presentation | 2003/12/12 Characterization of Hf0/Si interface deposited by PLD Takeshi KANASHIMA, Masayuki SOHGAWA, Koji IKEDA, Masato YOSHIDA, Masanori OKUYAMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | HfO_2 thin films have been prepared on Si(100) wafer by pulsed laser deposition (PLD) method, and characterized by electrical and optical techniques. The samples were deposited at various temperature in O_2. From the results of I-V and C-V characteristics, the sample deposited at 400℃ at pressure of 0.2 Torr, shows relatively small interface state and fiat-band shift. Moreover, the sample is grown in O_2 and N_2 mixture ambient to reduce the interfacial layer. The film whose interfacial layer is relatively small is obtained, but an interface trap is increased. It needs to optimize the deposition conditions. Interface strain of Si and insulator is characterized by photoreflectance spectroscopy (PRS). PRS intensity increases with increasing growth temperature, and an interfacial layer increases with increasing growth temperature. The strain on the Si surface also increases. Moreover, PRS spectrum is not observed in the sample deposited at the O_2 pressure of 0.05 Torr. This suggests that the interfacial layer is small. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Pulsed laser deposition (PLD) / Photoreflectance (PR) / HfO_2 / Si strain / high-k gate insulator |
| Paper # | SDM2003-187(2003-12) |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Hf0/Si interface deposited by PLD |
| Sub Title (in English) | |
| Keyword(1) | Pulsed laser deposition (PLD) |
| Keyword(2) | Photoreflectance (PR) |
| Keyword(3) | HfO_2 |
| Keyword(4) | Si strain |
| Keyword(5) | high-k gate insulator |
| 1st Author's Name | Takeshi KANASHIMA |
| 1st Author's Affiliation | Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University() |
| 2nd Author's Name | Masayuki SOHGAWA |
| 2nd Author's Affiliation | Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| 3rd Author's Name | Koji IKEDA |
| 3rd Author's Affiliation | Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| 4th Author's Name | Masato YOSHIDA |
| 4th Author's Affiliation | Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| 5th Author's Name | Masanori OKUYAMA |
| 5th Author's Affiliation | Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| Date | 2003/12/12 |
| Paper # | SDM2003-187(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |