| Presentation | 2003/12/12 Effect of Low-Pressure Consolidation Process on Electrical Properties of Sol-Gel Derived PZT Thin Films Takaaki MIYASAKO, Masaru SENOO, Eisuke TOKUMITSU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In these years, Ferroelectric Random Access Memory (FeRAM) has attracted much attention as non-volatile, low power and high speed memory. In particular, capacitor-type FeRAM with Pb(Zr, Ti)O_3(PZT) thin film is the most widely studied and now commercially available. In this research, we have fabricated PZT thin films using low-pressure consolidation process in sol-gel method. Drastic improvement of electrical properties such as remenent polarization, coercive field, saturation property, squareness, and leakage current have been obtained for the PZT thin films fabricated with low-pressure consolidation process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PZT thin films / sol-gel method / FeRAM / low-pressure consolidation |
| Paper # | SDM2003-186(2003-12) |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Low-Pressure Consolidation Process on Electrical Properties of Sol-Gel Derived PZT Thin Films |
| Sub Title (in English) | |
| Keyword(1) | PZT thin films |
| Keyword(2) | sol-gel method |
| Keyword(3) | FeRAM |
| Keyword(4) | low-pressure consolidation |
| 1st Author's Name | Takaaki MIYASAKO |
| 1st Author's Affiliation | Precision and Intelligence Laboratry, Tokyo Institute ofTechnology() |
| 2nd Author's Name | Masaru SENOO |
| 2nd Author's Affiliation | Precision and Intelligence Laboratry, Tokyo Institute ofTechnology |
| 3rd Author's Name | Eisuke TOKUMITSU |
| 3rd Author's Affiliation | Precision and Intelligence Laboratry, Tokyo Institute ofTechnology:IT21 Center RIEC Tohoku Univ. |
| Date | 2003/12/12 |
| Paper # | SDM2003-186(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |