Presentation | 2003/12/12 Fabrication of Silicon Doped Bismuth Titanate Thin Films Masaki Yamaguchi, Yoichiro Masuda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Silicon (Si) doped bismuth titanate (Bi_4Ti_3O_<12>) thin films were formed on (100)-oriented silicon wafers derived by metal organic decomposition (MOD) method. In the conventional MOD method, it is necessary to carry out the high temperature processes. In contrast, silicon doped Bi_4Ti_3O_<12> thin film exhibit highly c-axis oriented. However, crystallinity and electrical properties were heavy doped film degrade by heavily silicon doping. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Bismuth titanate / silicon doping / metal-organic decomposition method / thin films |
Paper # | SDM2003-185(2003-12) |
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Conference Information | |
Committee | SDM |
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Conference Date | 2003/12/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of Silicon Doped Bismuth Titanate Thin Films |
Sub Title (in English) | |
Keyword(1) | Bismuth titanate |
Keyword(2) | silicon doping |
Keyword(3) | metal-organic decomposition method |
Keyword(4) | thin films |
1st Author's Name | Masaki Yamaguchi |
1st Author's Affiliation | Department of Electrical Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology() |
2nd Author's Name | Yoichiro Masuda |
2nd Author's Affiliation | Department of Electrical Engineering, Hachinohe Institute of Technology |
Date | 2003/12/12 |
Paper # | SDM2003-185(2003-12) |
Volume (vol) | vol.103 |
Number (no) | 533 |
Page | pp.pp.- |
#Pages | 5 |
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