Presentation 2003/12/12
Fabrication of Silicon Doped Bismuth Titanate Thin Films
Masaki Yamaguchi, Yoichiro Masuda,
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Abstract(in English) Silicon (Si) doped bismuth titanate (Bi_4Ti_3O_<12>) thin films were formed on (100)-oriented silicon wafers derived by metal organic decomposition (MOD) method. In the conventional MOD method, it is necessary to carry out the high temperature processes. In contrast, silicon doped Bi_4Ti_3O_<12> thin film exhibit highly c-axis oriented. However, crystallinity and electrical properties were heavy doped film degrade by heavily silicon doping.
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Keyword(in English) Bismuth titanate / silicon doping / metal-organic decomposition method / thin films
Paper # SDM2003-185(2003-12)
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Conference Information
Committee SDM
Conference Date 2003/12/12(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Silicon Doped Bismuth Titanate Thin Films
Sub Title (in English)
Keyword(1) Bismuth titanate
Keyword(2) silicon doping
Keyword(3) metal-organic decomposition method
Keyword(4) thin films
1st Author's Name Masaki Yamaguchi
1st Author's Affiliation Department of Electrical Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology()
2nd Author's Name Yoichiro Masuda
2nd Author's Affiliation Department of Electrical Engineering, Hachinohe Institute of Technology
Date 2003/12/12
Paper # SDM2003-185(2003-12)
Volume (vol) vol.103
Number (no) 533
Page pp.pp.-
#Pages 5
Date of Issue