| Presentation | 2003/12/12 Calculation of Carrier Thermal Velocity in Si-NMOSFET : Dependence on Channel Impurity Concentration, Backscattering Coefficient, and Si-channel Thickness Michiru HOGYOKU, Toshiaki TSUCHIYA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We discuss influence of surface concentration for ionized impurities in the channel and of the backscattering coefficient upon the carrier thermal velocity in Si-NMOSFET's by means of surface quantization calculation for MOS structure. It is re-noted that a trend of increase in channel impurity concentration brings not only negative parasitics, namely degradation of the low field mobility and of the diode characteristics and increase in the electric field inside the gate insulator, but also favorable increase in the carrier thermal velocity. That favorable increase is interpreted in the same manner as increase in the inversion layer capacitance along that trend. Moreover, we note that although reduction of channel impurity concentration to enhance the low field mobility degrades the carrier thermal velocity, the quantum confinement effect of the ultra-thin-channel double-gate FD SOI restores and improves the degraded carrier thermal velocity. That effect is compared with similar effect that has already been found in the ultra-thin-channel single-gate FD SOI. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | surface quantization / backscattering coefficient / carrier thermal velocity / quantum confinement effect |
| Paper # | SDM2003-184(2003-12) |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Calculation of Carrier Thermal Velocity in Si-NMOSFET : Dependence on Channel Impurity Concentration, Backscattering Coefficient, and Si-channel Thickness |
| Sub Title (in English) | |
| Keyword(1) | surface quantization |
| Keyword(2) | backscattering coefficient |
| Keyword(3) | carrier thermal velocity |
| Keyword(4) | quantum confinement effect |
| 1st Author's Name | Michiru HOGYOKU |
| 1st Author's Affiliation | TIC Technology Development Department, Seiko Epson Corporation() |
| 2nd Author's Name | Toshiaki TSUCHIYA |
| 2nd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Shimane University |
| Date | 2003/12/12 |
| Paper # | SDM2003-184(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |