| Presentation | 2003/12/12 The deposition of low-temperature poly crystalline silicon by effects of hydrogen radicals and high density / low potential plasma Technique Hiroya KIRIMURA, Kiyoshi KUBOTA, Eiji TAKAHASHI, Shigeaki KISHIDA, Kiyoshi OGATA, Koji KITAJIMA, Yukiharu URAOKA, Takashi FUYUKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For direct-deposition methods of microcrystalline silicon, we have developed the plasma enhanced CVD system which makes silane plasmas with high density and low potential. We have researched the two-step deposition process which consists of the silicon nucleation-step using atomic hydrogen (radicals) and the microcrystalline growth-step using silane plasmas at low temperature. In this research, we have estimated that silicon films are crystallized from interface of SiO2 substrate by TEM and UV-Raman analysis. Furthermore the results of electron-mobility from TFT characteristics have proved that this method have an effect on direct-deposition of microcrystalline silicon. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Microcrystalline silicon / Silane plasma / Nucleation / Atomic hydrogen / TFT-mobility |
| Paper # | SDM2003-183(2003-12) |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The deposition of low-temperature poly crystalline silicon by effects of hydrogen radicals and high density / low potential plasma Technique |
| Sub Title (in English) | |
| Keyword(1) | Microcrystalline silicon |
| Keyword(2) | Silane plasma |
| Keyword(3) | Nucleation |
| Keyword(4) | Atomic hydrogen |
| Keyword(5) | TFT-mobility |
| 1st Author's Name | Hiroya KIRIMURA |
| 1st Author's Affiliation | R & D Laboratories, Nissin Electric Co., Ltd.() |
| 2nd Author's Name | Kiyoshi KUBOTA |
| 2nd Author's Affiliation | R & D Laboratories, Nissin Electric Co., Ltd. |
| 3rd Author's Name | Eiji TAKAHASHI |
| 3rd Author's Affiliation | R & D Laboratories, Nissin Electric Co., Ltd. |
| 4th Author's Name | Shigeaki KISHIDA |
| 4th Author's Affiliation | R & D Laboratories, Nissin Electric Co., Ltd. |
| 5th Author's Name | Kiyoshi OGATA |
| 5th Author's Affiliation | R & D Laboratories, Nissin Electric Co., Ltd. |
| 6th Author's Name | Koji KITAJIMA |
| 6th Author's Affiliation | Graduate School of Material Science, Nara Institute of Science and Technology |
| 7th Author's Name | Yukiharu URAOKA |
| 7th Author's Affiliation | Graduate School of Material Science, Nara Institute of Science and Technology |
| 8th Author's Name | Takashi FUYUKI |
| 8th Author's Affiliation | Graduate School of Material Science, Nara Institute of Science and Technology |
| Date | 2003/12/12 |
| Paper # | SDM2003-183(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 6 |
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