| Presentation | 2003/12/12 Crystal growth of polycrystalline Si prepared by combined method of SPC followed by ELA N. Kawamoto, N. Matsuo, H. Hamada, Y. Harada, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The crystallinity of polycrystalline Si (poly-Si) produced by the combined method of solid phase crystallization (SPC) followed by excimer laser annealing (ELA) or ELA followed by SPC is examined. The tensile stress relaxation occurred by performing the SPC before or after ELA. Defect densities of poly-Si films which are recrystallized by ELA, ELA followed by SPC and SPC followed by ELA decrease in that order. By performing SPC at 590℃ for 350minutes followed by ELA, poly-Si film with low stress and low defect density was realized. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | polycrystalline Si / excimer laser annealing / solid phase crystallization / crystal growth mechanism |
| Paper # | SDM2003-182(2003-12) |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Crystal growth of polycrystalline Si prepared by combined method of SPC followed by ELA |
| Sub Title (in English) | |
| Keyword(1) | polycrystalline Si |
| Keyword(2) | excimer laser annealing |
| Keyword(3) | solid phase crystallization |
| Keyword(4) | crystal growth mechanism |
| 1st Author's Name | N. Kawamoto |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Yamaguchi University() |
| 2nd Author's Name | N. Matsuo |
| 2nd Author's Affiliation | Department of Material Engineering, Himeji Institute of Technology |
| 3rd Author's Name | H. Hamada |
| 3rd Author's Affiliation | Materials and Devices Development Center BU, SANYO Electric Co., Ltd. |
| 4th Author's Name | Y. Harada |
| 4th Author's Affiliation | Department of Material Engineering, Himeji Institute of Technology |
| Date | 2003/12/12 |
| Paper # | SDM2003-182(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |