Presentation	2003/12/12 Activation of dopant atoms doped to polycrystalline silicon by ion doping method Toshiyuki Sameshima, Nobuyuki Andoh, Yasunori Andoh,
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Abstract(in English)	Phosphorus and boron atoms implanted in laser crystallized polycrystalline silicon films by ion doping method were activated by oxygen plasma treatment at 260℃. The oxygen plasma treatment increased the electrical conductivity to 7.3S/cm for 1.0×10^<14>cm^<-2> phosphorus doping and to 110S/cm for 1.6×l0^<15>cm^<-2> boron doping. Activation ratio after 260℃ treatments was estimated to 21 and 15% for phosphorus and boron doping case, respectively.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Low temperature / oxygen plasma / ion doping
Paper #	SDM2003-181(2003-12)
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Committee	SDM
Conference Date	2003/12/12(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Activation of dopant atoms doped to polycrystalline silicon by ion doping method
Sub Title (in English)
Keyword(1)	Low temperature
Keyword(2)	oxygen plasma
Keyword(3)	ion doping
1st Author's Name	Toshiyuki Sameshima
1st Author's Affiliation	Tokyo University of Agriculture and Technology()
2nd Author's Name	Nobuyuki Andoh
2nd Author's Affiliation	Tokyo University of Agriculture and Technology
3rd Author's Name	Yasunori Andoh
3rd Author's Affiliation	Nissin Ion Equipment. Co., Ltd.
Date	2003/12/12
Paper #	SDM2003-181(2003-12)
Volume (vol)	vol.103
Number (no)	533
Page	pp.pp.-
#Pages	5
Date of Issue