| Presentation | 2003/12/12 Dependence of Poly-Si TFT Characteristic on Oxide Interface Traps and Grain Boundary Traps and its Application to Diagnosis of Fabrication Processes Mutsumi KIMURA, Satoshi INOUE, Tatsuya SHIMODA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The dependence of poly-Si TFT characteristics on the density of oxide interface traps (Dit) and grain boundary traps (Dgb) has been analyzed. First, actual trap densities are extracted using a low-frequency C-V characteristic, I-V characteristic and extraction technique that has been developed by the authors. Next, the dependence of TFT characteristics is analyzed using device simulation by varying these trap densities from actual ones. It is found that the subthreshold swing and threshold voltage mainly depend on Dit, while the transistor mobility depends on Dgb. By applying these results to diagnosis of fabrication processes, it is found that oxygen plasma treatment reduces Dit, while PECVD-TEOS for gate-oxide generates Dgb. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Poly-Si / TFT / Oxide Interface / Grain Boundary / Trap / Diagnosis / Fabrication Process / Device Simulation |
| Paper # | SDM2003-180(2003-12) |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of Poly-Si TFT Characteristic on Oxide Interface Traps and Grain Boundary Traps and its Application to Diagnosis of Fabrication Processes |
| Sub Title (in English) | |
| Keyword(1) | Poly-Si |
| Keyword(2) | TFT |
| Keyword(3) | Oxide Interface |
| Keyword(4) | Grain Boundary |
| Keyword(5) | Trap |
| Keyword(6) | Diagnosis |
| Keyword(7) | Fabrication Process |
| Keyword(8) | Device Simulation |
| 1st Author's Name | Mutsumi KIMURA |
| 1st Author's Affiliation | Department of Electronics and Informatics, Ryukoku University() |
| 2nd Author's Name | Satoshi INOUE |
| 2nd Author's Affiliation | Technology Platform Research Center, Seiko Epson Corporation |
| 3rd Author's Name | Tatsuya SHIMODA |
| 3rd Author's Affiliation | Technology Platform Research Center, Seiko Epson Corporation |
| Date | 2003/12/12 |
| Paper # | SDM2003-180(2003-12) |
| Volume (vol) | vol.103 |
| Number (no) | 533 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |