| Presentation | 2003/5/9 Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy Daina INOUE, Hidenobu Maki, Takahiro MORI, Kazuo OGAWA, Atsushi KOIZUMI, Taketoshi YOSHIKANE, Masao TABUCHI, Yasufumi FUJIWARA, Yoshikazu TAKEDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Er doped GaAs (GaAs:Er) was demonstrated to show stronger photoluminescence (PL) emission at around 1.5μm bylow-temperature molecular-beam epitaxy (LT-MBE). In this study we have investigatedthat Er-related PL intensity was increased by AlGaAs/GaAs:Er/AlGaAs structure at a low temperature. Wehave also observed Er luminescence in GaAs by current injection at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MBE / rare-earth / GaAs / Er / low-temperature growth / LED |
| Paper # | ED2003-40,CPM2003-39,SDM2003-40 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy |
| Sub Title (in English) | |
| Keyword(1) | MBE |
| Keyword(2) | rare-earth |
| Keyword(3) | GaAs |
| Keyword(4) | Er |
| Keyword(5) | low-temperature growth |
| Keyword(6) | LED |
| 1st Author's Name | Daina INOUE |
| 1st Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy() |
| 2nd Author's Name | Hidenobu Maki |
| 2nd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| 3rd Author's Name | Takahiro MORI |
| 3rd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| 4th Author's Name | Kazuo OGAWA |
| 4th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| 5th Author's Name | Atsushi KOIZUMI |
| 5th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| 6th Author's Name | Taketoshi YOSHIKANE |
| 6th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| 7th Author's Name | Masao TABUCHI |
| 7th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| 8th Author's Name | Yasufumi FUJIWARA |
| 8th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| 9th Author's Name | Yoshikazu TAKEDA |
| 9th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Univeristy |
| Date | 2003/5/9 |
| Paper # | ED2003-40,CPM2003-39,SDM2003-40 |
| Volume (vol) | vol.103 |
| Number (no) | 51 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |