Presentation 2003/9/22
Analysis of Quantum Effects by Full Band Monte Carlo Simulator FALCON
Ryo Tanabe, Yoshio Ashizawa, Hideki Oka,
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Abstract(in English) In sub-100 nm regime ultrasmall MOSFET, it is difficult to describe carrier transport phenomena by conventional drift-diffusion model, and a Monte Carlo method becomes very important. We implemented a quantum effect model in Fujitsu 2D Full Band Ensemble Monte Carlo Simulator FALCON and evaluated influence affected by quantum effects. And recently, Non-Planar devices such as FinFET and TriGate FET are often studied. In such devices, structural and quantum 3D effects are very important. Then we simulated 3D structure devices including 3D Density Gradient quantum effect with ISE 3D device simulator DESSIS, and studied the limit of 2D Monte Carlo analysis.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Full Band / Monte Carlo / FALCON / Quantum Effect / FinFET / Density Gradient / Bohm-based / 3D
Paper # VLD2003-58
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Committee SDM
Conference Date 2003/9/22(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Quantum Effects by Full Band Monte Carlo Simulator FALCON
Sub Title (in English)
Keyword(1) Full Band
Keyword(2) Monte Carlo
Keyword(3) FALCON
Keyword(4) Quantum Effect
Keyword(5) FinFET
Keyword(6) Density Gradient
Keyword(7) Bohm-based
Keyword(8) 3D
1st Author's Name Ryo Tanabe
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name Yoshio Ashizawa
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name Hideki Oka
3rd Author's Affiliation Fujitsu Laboratories Ltd.
Date 2003/9/22
Paper # VLD2003-58
Volume (vol) vol.103
Number (no) 338
Page pp.pp.-
#Pages 6
Date of Issue