| Presentation | 2003/8/15 Who should solve the problem of gate leakage current? : Discussion between circuit designer and device engineer , |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Increase in gate leakage current is considered as one of the crucial problem for near-future LSIs. Circuit designers and device engineers will clarify when and in what degree this problem would impact the development of LSI and discuss who and how it should be solved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | power consumption / standby power / gate leakage current / high-k gate dielectrics |
| Paper # | SDM2003-146,ICD2003-79 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Who should solve the problem of gate leakage current? : Discussion between circuit designer and device engineer |
| Sub Title (in English) | |
| Keyword(1) | power consumption |
| Keyword(2) | standby power |
| Keyword(3) | gate leakage current |
| Keyword(4) | high-k gate dielectrics |
| 1st Author's Name | |
| 1st Author's Affiliation | () |
| Date | 2003/8/15 |
| Paper # | SDM2003-146,ICD2003-79 |
| Volume (vol) | vol.103 |
| Number (no) | 260 |
| Page | pp.pp.- |
| #Pages | 69 |
| Date of Issue | |