| Presentation | 2003/8/15 Thermal stability of HfO_2 gate dielectric film : Interfacial growth and silicidation Noriyuki Miyata, Manisha Kundu, Masakazu Ichikawa, Toshihide Nabatame, Tsuyoshi Horikawa, Akira Toriumi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We examined the interfacial growth and silicidation of a thin HfO_2/Si structure. It was fund that the growth of interfacial layer was a Si oxidation reaction at the HfO_2/Si interface caused by oxygen incorporation from the annealing ambient. This reaction proceeded under even high vacuum conditions. For instance, an order of 10^<-7> Torr is required to suppress the interfacial oxidation at 800℃. We also demonstrated that an ultrathin Al_2O_2 capping layer on the HfO_2/Si structure effectively suppressed the interfacial Si oxidation. The silicidation took place as a void nucleation at temperatures higher than 900℃. Although the density of silicide voids was less than 1000 cm^<-2>, this reaction is a crucial issue to |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-k / HfO_2 / silicon / silicide / oxidation / decomposition |
| Paper # | SDM2003-144,ICD2003-77 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Thermal stability of HfO_2 gate dielectric film : Interfacial growth and silicidation |
| Sub Title (in English) | |
| Keyword(1) | High-k |
| Keyword(2) | HfO_2 |
| Keyword(3) | silicon |
| Keyword(4) | silicide |
| Keyword(5) | oxidation |
| Keyword(6) | decomposition |
| 1st Author's Name | Noriyuki Miyata |
| 1st Author's Affiliation | MIRAI-ASRC, AIST() |
| 2nd Author's Name | Manisha Kundu |
| 2nd Author's Affiliation | MIRAI-ASRC, AIST |
| 3rd Author's Name | Masakazu Ichikawa |
| 3rd Author's Affiliation | MIRAI-ASRC, AIST:The University of Tokyo |
| 4th Author's Name | Toshihide Nabatame |
| 4th Author's Affiliation | MIRAI-ASRC, AIST |
| 5th Author's Name | Tsuyoshi Horikawa |
| 5th Author's Affiliation | MIRAI-ASET AIST |
| 6th Author's Name | Akira Toriumi |
| 6th Author's Affiliation | MIRAI-ASRC, AIST:The University of Tokyo |
| Date | 2003/8/15 |
| Paper # | SDM2003-144,ICD2003-77 |
| Volume (vol) | vol.103 |
| Number (no) | 260 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |