Presentation | 2003/8/15 Thermal stability of HfO_2 gate dielectric film : Interfacial growth and silicidation Noriyuki Miyata, Manisha Kundu, Masakazu Ichikawa, Toshihide Nabatame, Tsuyoshi Horikawa, Akira Toriumi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We examined the interfacial growth and silicidation of a thin HfO_2/Si structure. It was fund that the growth of interfacial layer was a Si oxidation reaction at the HfO_2/Si interface caused by oxygen incorporation from the annealing ambient. This reaction proceeded under even high vacuum conditions. For instance, an order of 10^<-7> Torr is required to suppress the interfacial oxidation at 800℃. We also demonstrated that an ultrathin Al_2O_2 capping layer on the HfO_2/Si structure effectively suppressed the interfacial Si oxidation. The silicidation took place as a void nucleation at temperatures higher than 900℃. Although the density of silicide voids was less than 1000 cm^<-2>, this reaction is a crucial issue to |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | High-k / HfO_2 / silicon / silicide / oxidation / decomposition |
Paper # | SDM2003-144,ICD2003-77 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2003/8/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Thermal stability of HfO_2 gate dielectric film : Interfacial growth and silicidation |
Sub Title (in English) | |
Keyword(1) | High-k |
Keyword(2) | HfO_2 |
Keyword(3) | silicon |
Keyword(4) | silicide |
Keyword(5) | oxidation |
Keyword(6) | decomposition |
1st Author's Name | Noriyuki Miyata |
1st Author's Affiliation | MIRAI-ASRC, AIST() |
2nd Author's Name | Manisha Kundu |
2nd Author's Affiliation | MIRAI-ASRC, AIST |
3rd Author's Name | Masakazu Ichikawa |
3rd Author's Affiliation | MIRAI-ASRC, AIST:The University of Tokyo |
4th Author's Name | Toshihide Nabatame |
4th Author's Affiliation | MIRAI-ASRC, AIST |
5th Author's Name | Tsuyoshi Horikawa |
5th Author's Affiliation | MIRAI-ASET AIST |
6th Author's Name | Akira Toriumi |
6th Author's Affiliation | MIRAI-ASRC, AIST:The University of Tokyo |
Date | 2003/8/15 |
Paper # | SDM2003-144,ICD2003-77 |
Volume (vol) | vol.103 |
Number (no) | 260 |
Page | pp.pp.- |
#Pages | 6 |
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