| Presentation | 2003/8/15 Review of Recent Trend and Development of MOS Transistors Toshihiro SUGII, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reviewed recent trends of MOSFET scaling. To keep up with the trends, there are many device and process issues to be developed, which are categorized in this paper. The state of the art transistor for the 90 nm node, which has overcome most of the issues, is introduced. For the 65 nm node and beyond, an introduction of new materials such as a high-k gate insulator and a metal gate will be necessary to continue performance improvement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / Trend / Scaling |
| Paper # | SDM2003-142,ICD2003-75 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Review of Recent Trend and Development of MOS Transistors |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | Trend |
| Keyword(3) | Scaling |
| 1st Author's Name | Toshihiro SUGII |
| 1st Author's Affiliation | FUJITSU LIMITED() |
| Date | 2003/8/15 |
| Paper # | SDM2003-142,ICD2003-75 |
| Volume (vol) | vol.103 |
| Number (no) | 260 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |