| Presentation | 2003/8/15 A 90 nm Low Power 32K-Byte Embedded SRAM with Gate Leakage Suppression Circuit for Mobile Applications Koji Nii, Susumu Imaoka, Tomoaki Yoshizawa, Yasumasa Tsukamoto, Hiroshi Makino, Yoshinobu Yamagami, Toshikazu Suzuki, Akinori Shibayama, Shuhei Iwade, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In sub100 nm generation, gate tunneling leak current increases and dominates total standby leak current of LSI based on decreasing gate oxide thickness. We propose reducing gate leak current in SRAM using Local DC Level Control (LDLC) and an Automatic Gate Leakage Suppression Driver (AGLSD) to reduce gate leak current in the peripheral circuit. We designed and fabricated a 32KB 1-port SRAM using 90 nm CMOS technology. Evaluation shows that the standby current of 32KB SRAM is 1.2 uA at 1.2 V and room temperature. It is reduced to 7.5 % of conventional SRAM. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SRAM / Low power / Gate leakage / Stand-by |
| Paper # | SDM2003-141,ICD2003-74 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 90 nm Low Power 32K-Byte Embedded SRAM with Gate Leakage Suppression Circuit for Mobile Applications |
| Sub Title (in English) | |
| Keyword(1) | SRAM |
| Keyword(2) | Low power |
| Keyword(3) | Gate leakage |
| Keyword(4) | Stand-by |
| 1st Author's Name | Koji Nii |
| 1st Author's Affiliation | Renesas Technology Corp.() |
| 2nd Author's Name | Susumu Imaoka |
| 2nd Author's Affiliation | Renesas Device Design Corp. |
| 3rd Author's Name | Tomoaki Yoshizawa |
| 3rd Author's Affiliation | Renesas Technology Corp. |
| 4th Author's Name | Yasumasa Tsukamoto |
| 4th Author's Affiliation | Renesas Technology Corp. |
| 5th Author's Name | Hiroshi Makino |
| 5th Author's Affiliation | Renesas Technology Corp. |
| 6th Author's Name | Yoshinobu Yamagami |
| 6th Author's Affiliation | Matsushita Electric Industrial Corp. |
| 7th Author's Name | Toshikazu Suzuki |
| 7th Author's Affiliation | Matsushita Electric Industrial Corp. |
| 8th Author's Name | Akinori Shibayama |
| 8th Author's Affiliation | Matsushita Electric Industrial Corp. |
| 9th Author's Name | Shuhei Iwade |
| 9th Author's Affiliation | Osaka Institute of Technology |
| Date | 2003/8/15 |
| Paper # | SDM2003-141,ICD2003-74 |
| Volume (vol) | vol.103 |
| Number (no) | 260 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |