Presentation | 2003/8/15 Bitline/Plateline Reference-Level-Precharge Scheme for High-Density ChainFeRAM Kohei Oikawa, D. Takashima, S. Shiratake, K. Hoya, H.O. Joachim, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper proposes a new bitline/plateline precharge and driving scheme for high-speed and high-density chain FeRAM. Both bitline and plateline are precharged to reference level, and cell data is readout by applying bias to ferroelectric capacitor by pulling up plateline and pulling down bitline in access. This scheme suppresses both reliability degradation of cell transistors and signal-loss inherent to chain FeRAM architecture. Furthermore, this scheme reduces the active power dissipation by 1 0% without access time penalty. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ferroelectric memory / ChainFeRAM / low power |
Paper # | SDM2003-139,ICD2003-72 |
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Committee | SDM |
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Conference Date | 2003/8/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Bitline/Plateline Reference-Level-Precharge Scheme for High-Density ChainFeRAM |
Sub Title (in English) | |
Keyword(1) | ferroelectric memory |
Keyword(2) | ChainFeRAM |
Keyword(3) | low power |
1st Author's Name | Kohei Oikawa |
1st Author's Affiliation | Semiconductor Company, Toshiba Corp.() |
2nd Author's Name | D. Takashima |
2nd Author's Affiliation | Semiconductor Company, Toshiba Corp. |
3rd Author's Name | S. Shiratake |
3rd Author's Affiliation | Semiconductor Company, Toshiba Corp. |
4th Author's Name | K. Hoya |
4th Author's Affiliation | Semiconductor Company, Toshiba Corp. |
5th Author's Name | H.O. Joachim |
5th Author's Affiliation | Infineon Technologies Japan K.K. |
Date | 2003/8/15 |
Paper # | SDM2003-139,ICD2003-72 |
Volume (vol) | vol.103 |
Number (no) | 260 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |