| Presentation | 2003/8/15 A Memory Using One-Transistor Gain Cell on SOI(FBC) with Performance Suitable for Embedded DRAM's : Measurement Results of Cell Characteristics and Memory Performance Takashi Ohsawa, Tomoki Higashi, Katsuyuki Fujita, Tamio Ikehashi, Takeshi Kajiyama, Yoshiaki Fukuzumi, Tomoaki Shino, Hiroaki Yamada, Hiroomi Nakajima, Yoshihiro Minarni, Takashi Yamada, Kazumi Inoh, Takeshi Hamamoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 288Kbit memory chip featuring a one-transistor gain cell on SOI of the size 0.21 μm^2 (7F^2 with F=0.175 μm) which we named the floating body transistor cell(FBC) is presented and basic characteristics of the cell and the memory chip performance are disclosed. The threshold voltages of a cell transistor in the chip for the data "1" and for the data "0" are measured by using a direct access test circuit and a fail bit map for the 96Kbit array is obtained. A sensing scheme which was designed to eliminate the effect of cell characteristics variation due to process and temperature fluctuation as common mode noise is verified to be working and the random access time is measured to be less than 100ns. The characteristics of data hold demonstrate that the FBC can satisfy retention time specifications for some embedded memories. The access time and the data retention time show that the FBC has a potential to be used as a future embedded DRAM memory cell. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / FBC / Gain Cell / Capacitor-less DRAM / Embedded DRAM |
| Paper # | SDM2003-137,ICD2003-70 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Memory Using One-Transistor Gain Cell on SOI(FBC) with Performance Suitable for Embedded DRAM's : Measurement Results of Cell Characteristics and Memory Performance |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | FBC |
| Keyword(3) | Gain Cell |
| Keyword(4) | Capacitor-less DRAM |
| Keyword(5) | Embedded DRAM |
| 1st Author's Name | Takashi Ohsawa |
| 1st Author's Affiliation | TOSHIBA Corporation Semiconductor Company() |
| 2nd Author's Name | Tomoki Higashi |
| 2nd Author's Affiliation | TOSHIBA Microelectronics Corporation |
| 3rd Author's Name | Katsuyuki Fujita |
| 3rd Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 4th Author's Name | Tamio Ikehashi |
| 4th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 5th Author's Name | Takeshi Kajiyama |
| 5th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 6th Author's Name | Yoshiaki Fukuzumi |
| 6th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 7th Author's Name | Tomoaki Shino |
| 7th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 8th Author's Name | Hiroaki Yamada |
| 8th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 9th Author's Name | Hiroomi Nakajima |
| 9th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 10th Author's Name | Yoshihiro Minarni |
| 10th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 11th Author's Name | Takashi Yamada |
| 11th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 12th Author's Name | Kazumi Inoh |
| 12th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| 13th Author's Name | Takeshi Hamamoto |
| 13th Author's Affiliation | TOSHIBA Corporation Semiconductor Company |
| Date | 2003/8/15 |
| Paper # | SDM2003-137,ICD2003-70 |
| Volume (vol) | vol.103 |
| Number (no) | 260 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |