| Presentation | 2003/8/15 Memory cell for Embeded DRAM on SOI : FBC(Floating Body Cell) Yoshihiro MINAMI, Kazumi INOH, Tomoaki SHINO, Hiroaki YAMADA, Hiroomi NAKAJIMA, Takashi YAMADA, Takashi OHSAWA, Tomoki HIGASHI, Katsuyuki FUJITA, Tamio IKEHASHI, Takeshi KAJIYAMA, Yoshiaki FUKUZUMI, Takeshi HAMAMOTO, Hidemi ISHIUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The memory cell characteristics of the FBC (Floating Body Cell) have been experimentally verified by 0.175 μm cell array for the first time. The FBC is a one-transistor gain cell, which is a suitable structure for the future embedded DRAM on SOI wafer. 99.77% function bit yield of 96Kbit ADM(Array Diagnostic Monitor) has been obtained, and the retention time of 500msec have been realized at 85℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2003-136,ICD2003-69 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Memory cell for Embeded DRAM on SOI : FBC(Floating Body Cell) |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Yoshihiro MINAMI |
| 1st Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company() |
| 2nd Author's Name | Kazumi INOH |
| 2nd Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 3rd Author's Name | Tomoaki SHINO |
| 3rd Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 4th Author's Name | Hiroaki YAMADA |
| 4th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 5th Author's Name | Hiroomi NAKAJIMA |
| 5th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 6th Author's Name | Takashi YAMADA |
| 6th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 7th Author's Name | Takashi OHSAWA |
| 7th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 8th Author's Name | Tomoki HIGASHI |
| 8th Author's Affiliation | Design Solution Division,Toshiba Microelectronics Corp. |
| 9th Author's Name | Katsuyuki FUJITA |
| 9th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 10th Author's Name | Tamio IKEHASHI |
| 10th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 11th Author's Name | Takeshi KAJIYAMA |
| 11th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 12th Author's Name | Yoshiaki FUKUZUMI |
| 12th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 13th Author's Name | Takeshi HAMAMOTO |
| 13th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 14th Author's Name | Hidemi ISHIUCHI |
| 14th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| Date | 2003/8/15 |
| Paper # | SDM2003-136,ICD2003-69 |
| Volume (vol) | vol.103 |
| Number (no) | 260 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |