| Presentation | 2003/6/25 [Invited]Issues for high density MRAM(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) Taewan Kim, Wanjun PARK, I-Hun SONG, Sangjin Park, Yongsoo Kim, Eunsik Kim, Jangeun Lee, Hongsik Jeong, Gitae Jeong, Gwanhyeob Koh, Ki-nam Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Key attributes of MRAM technology are known as non-volatility with high speed and density, radiation hardness, unlimited endurance. A lot of results have been announced for commercial market. And it is anticipated that MRAM will play an important role in future memory market through its unique, functional advantages. For high density MRAM as a standalone memory, several issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to the MRAM issues, such as cell stability and switching process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MRAM(Magneto-resistive Random Access Memory) / MTJ(Magnetic Tunnel Junction) / Selectivity / Switching process |
| Paper # | ED2003-101,SDM2003-112 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited]Issues for high density MRAM(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) |
| Sub Title (in English) | |
| Keyword(1) | MRAM(Magneto-resistive Random Access Memory) |
| Keyword(2) | MTJ(Magnetic Tunnel Junction) |
| Keyword(3) | Selectivity |
| Keyword(4) | Switching process |
| 1st Author's Name | Taewan Kim |
| 1st Author's Affiliation | Samsung Advanced Institute of Technology, MD Lab() |
| 2nd Author's Name | Wanjun PARK |
| 2nd Author's Affiliation | Samsung Advanced Institute of Technology, MD Lab |
| 3rd Author's Name | I-Hun SONG |
| 3rd Author's Affiliation | Samsung Advanced Institute of Technology, MD Lab |
| 4th Author's Name | Sangjin Park |
| 4th Author's Affiliation | Samsung Advanced Institute of Technology, MD Lab |
| 5th Author's Name | Yongsoo Kim |
| 5th Author's Affiliation | Samsung Advanced Institute of Technology, Storage Lab |
| 6th Author's Name | Eunsik Kim |
| 6th Author's Affiliation | Samsung Advanced Institute of Technology, Storage Lab |
| 7th Author's Name | Jangeun Lee |
| 7th Author's Affiliation | Process Development teamt, Semiconductor R&D Div. |
| 8th Author's Name | Hongsik Jeong |
| 8th Author's Affiliation | Advanced Technology Development, Semiconductor R&D Div. |
| 9th Author's Name | Gitae Jeong |
| 9th Author's Affiliation | Advanced Technology Development, Semiconductor R&D Div. |
| 10th Author's Name | Gwanhyeob Koh |
| 10th Author's Affiliation | Advanced Technology Development, Semiconductor R&D Div. |
| 11th Author's Name | Ki-nam Kim |
| 11th Author's Affiliation | Advanced Technology Development, Semiconductor R&D Div. |
| Date | 2003/6/25 |
| Paper # | ED2003-101,SDM2003-112 |
| Volume (vol) | vol.103 |
| Number (no) | 164 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |