| Presentation | 2003/6/25 Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots Floating Gate(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) Taku Shibaguchi, Yusuke Shimizu, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Multiple-step charging characteristics of electrons to a Si quantum-dots (Si-QDs) floating gate in the MOS capacitors and MOSFETs have been demonstrated in the temperature range of 200 - 350K. The temporal change in the drain current at a constant gate bias after complete discharging in the Si-QDs floating gate shows a specific stepwise reductions accompanied with metastable states in which the drain current is also remain unchanged with time until the next quick current reduction. The result indicates that, in the metastable states, injected electrons redistribute in the Si-QDs floating gate with keeping the effective total charge density in the floating gate and suggests that Coulomb interaction among electrons stored in neighboring dots play an important role on stepwise behavior in electron charging. From the slope of Arrehnius plots of the time for both each electron injection and metastable state, it is likely that a thermal activation process with an energy of 0.3eV is involved in the electron charging to the Si-QDs floating gate. The 0.3eV activation energy suggests the electron tunneling between different energy states among neighboring Si-QDs, considering the charging energy and quantization energy in Si-QDs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon quantum dot / multiple-step charging / MOS memory / floating gate / Coulomb blockade |
| Paper # | ED2003-94,SDM2003-105 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots Floating Gate(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) |
| Sub Title (in English) | |
| Keyword(1) | silicon quantum dot |
| Keyword(2) | multiple-step charging |
| Keyword(3) | MOS memory |
| Keyword(4) | floating gate |
| Keyword(5) | Coulomb blockade |
| 1st Author's Name | Taku Shibaguchi |
| 1st Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Science and Matter, Hiroshima University() |
| 2nd Author's Name | Yusuke Shimizu |
| 2nd Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Science and Matter, Hiroshima University |
| 3rd Author's Name | Mitsuhisa Ikeda |
| 3rd Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Science and Matter, Hiroshima University |
| 4th Author's Name | Hideki Murakami |
| 4th Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Science and Matter, Hiroshima University |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Science and Matter, Hiroshima University |
| Date | 2003/6/25 |
| Paper # | ED2003-94,SDM2003-105 |
| Volume (vol) | vol.103 |
| Number (no) | 164 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |