講演名 | 2003/6/25 [Invited]Nitride Semiconductor Nanostructures and Their Optical Properties(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) , |
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抄録(和) | |
抄録(英) | Nanostructures of InN and InGaN were grown by MOCVD and their optical properties were investigated. With the introduction of high growth temperature, InN/GaN quantum well structure was successfully grown for the first time. Their structural properties could be controlled by growth interruption. InGaN quantum well and quantum dot structures were also grown by controlling growth temperature and In incorporation. From PL analysis, InGaN quantum dot structure showed enhanced thermal characteristics, compared with that of quantum well structure. In the case of InN/GaN quantum well structure, enhanced thermal characteristics appeared when grown without growth interruption. It is supposed that InN/GaN quantum well structure has intrinsic quantum-dot like features caused by thickness fluctuation. |
キーワード(和) | |
キーワード(英) | InN / InGaN / Quantum well / Quantum dot |
資料番号 | ED2003-92,SDM2003-103 |
発行日 |
研究会情報 | |
研究会 | SDM |
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開催期間 | 2003/6/25(から1日開催) |
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テーマ(英) | |
委員長氏名(和) | |
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副委員長氏名(和) | |
副委員長氏名(英) | |
幹事氏名(和) | |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | [Invited]Nitride Semiconductor Nanostructures and Their Optical Properties(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) |
サブタイトル(和) | |
キーワード(1)(和/英) | / InN |
第 1 著者 氏名(和/英) | / Hyun Jin KIM |
第 1 著者 所属(和/英) | School of Materials Science and Engineering, Seoul National University |
発表年月日 | 2003/6/25 |
資料番号 | ED2003-92,SDM2003-103 |
巻番号(vol) | vol.103 |
号番号(no) | 164 |
ページ範囲 | pp.- |
ページ数 | 5 |
発行日 |