| Presentation | 2003/6/24 [Invited]High Performance AlGaN/GaN HEMTs with Recessed Gate(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) Yoshiaki SANO, Hideyuki OKITA, Katsuaki KAIFU, Juro MITA, Tomohiko SAGIMORI, Takehiko MAKITA, Tomoyuki YAMADA, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High performance AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed gate have been successfully fabricated on sapphire substrate. The HEMT with T shape recessed gate of 0.1μm gate length exhibited excellent current saturation properties. The maximum extrinsic trans-conductance (gm) was as high as 450 mS/mm. To our knowledge, this is the highest value of any GaN-based FETs ever reported. Moreover, the HEMTs exhibited excellent high frequency performances. A maximum unity current cut-off frequency, f_T, of 67 GHz and a maximum oscillation frequency, f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HEMT / recessed gate / sapphire substrate / silicon carbide / high frequency / high breakdown voltage |
| Paper # | ED2003-84,SDM2003-95 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited]High Performance AlGaN/GaN HEMTs with Recessed Gate(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | recessed gate |
| Keyword(4) | sapphire substrate |
| Keyword(5) | silicon carbide |
| Keyword(6) | high frequency |
| Keyword(7) | high breakdown voltage |
| 1st Author's Name | Yoshiaki SANO |
| 1st Author's Affiliation | Corp. Research & Development Center, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | Hideyuki OKITA |
| 2nd Author's Affiliation | Corp. Research & Development Center, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | Katsuaki KAIFU |
| 3rd Author's Affiliation | Corp. Research & Development Center, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Juro MITA |
| 4th Author's Affiliation | Corp. Research & Development Center, Oki Electric Industry Co., Ltd. |
| 5th Author's Name | Tomohiko SAGIMORI |
| 5th Author's Affiliation | Corp. Research & Development Center, Oki Electric Industry Co., Ltd. |
| 6th Author's Name | Takehiko MAKITA |
| 6th Author's Affiliation | Corp. Research & Development Center, Oki Electric Industry Co., Ltd. |
| 7th Author's Name | Tomoyuki YAMADA |
| 7th Author's Affiliation | Corp. Research & Development Center, Oki Electric Industry Co., Ltd. |
| 8th Author's Name | Hiroyasu ISHIKAWA |
| 8th Author's Affiliation | Nagoya Institute of Technology |
| 9th Author's Name | Takashi EGAWA |
| 9th Author's Affiliation | Nagoya Institute of Technology |
| 10th Author's Name | Takashi JIMBO |
| 10th Author's Affiliation | Nagoya Institute of Technology |
| Date | 2003/6/24 |
| Paper # | ED2003-84,SDM2003-95 |
| Volume (vol) | vol.103 |
| Number (no) | 163 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |