講演名 | 2003/6/23 Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) , |
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抄録(英) | Ferroelectric capacitors with LiNbO_3 film were fabricated using CSD method and demonstrated nonvolatile memory operations of the capacitors. C-axis oriented LiNbO_3 (006) peak was obtained from the prepared LiNbO_3/Pt/Ti/SiO_2/Si and LiNbO_3/p-Si (100) structures. At the annealing temperature of 800℃, the maximum LN (006) peak was observed. The capacitance in PtLiNbO_3/Pt/Ti/SiO_2/Si structure shows hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The dielectric constant of the LiNbO_3 films calculated from the capacitance at the accumulation region was about 27. Typical gate leakage current density of the MFS capacitor was the order of 10^<-7> A/cm^2 at the range of within ±300 kV/cm. The typical measured remnant polarization (2Pr) and coercive field (Ec) values were about 0.5 μC/cm^2 and 115 kV/cm, respectively. |
キーワード(和) | |
キーワード(英) | CSD(Chemical Solution Decomposition) / LiNbO_3 / Ferroelectric / MFM / MFS / Gate leakage currents / remnant polarization |
資料番号 | ED2003-70,SDM2003-81 |
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研究会情報 | |
研究会 | SDM |
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開催期間 | 2003/6/23(から1日開催) |
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申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | ENG |
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サブタイトル(和) | |
タイトル(英) | Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices) |
サブタイトル(和) | |
キーワード(1)(和/英) | / CSD(Chemical Solution Decomposition) |
第 1 著者 氏名(和/英) | / Yong-Seong Kim |
第 1 著者 所属(和/英) | Department of Semiconductor Engineering, Cheongju University |
発表年月日 | 2003/6/23 |
資料番号 | ED2003-70,SDM2003-81 |
巻番号(vol) | vol.103 |
号番号(no) | 162 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |