Presentation 2003/6/20
Reflection Electron Energy Loss Spectroscopy of HfSiO_x films
Yuuichi KAMIMUTA, Masamichi SUZUKI, Tsunehiro INO, Masahiro KOIKE, Akira NISHIYAMA,
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Abstract(in English) HfO_2 and HfSiO_x are attractive materials for the alternative gate dielectrics. Therefore it is important to measure their band gap in order to understand these electrical properties. We have used Reflection Electron Energy Loss Spectroscopy (REELS) to estimate the energy band gaps of these films. It is confirmed that REELS is a powerful tool to estimate the energy band gaps of high-k thin films because of its high surface sensitivity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) High-k / gate dielectric / HfSiO_x / Reflection Electron Energy Loss Spectroscopy / band gap
Paper # SDM2003-72
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Committee SDM
Conference Date 2003/6/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Reflection Electron Energy Loss Spectroscopy of HfSiO_x films
Sub Title (in English)
Keyword(1) High-k
Keyword(2) gate dielectric
Keyword(3) HfSiO_x
Keyword(4) Reflection Electron Energy Loss Spectroscopy
Keyword(5) band gap
1st Author's Name Yuuichi KAMIMUTA
1st Author's Affiliation Corporate Research And Development Center 8()
2nd Author's Name Masamichi SUZUKI
2nd Author's Affiliation Corporate Research And Development Center 1
3rd Author's Name Tsunehiro INO
3rd Author's Affiliation Corporate Research And Development Center 1
4th Author's Name Masahiro KOIKE
4th Author's Affiliation Corporate Research And Development Center 1
5th Author's Name Akira NISHIYAMA
5th Author's Affiliation Corporate Research And Development Center 8
Date 2003/6/20
Paper # SDM2003-72
Volume (vol) vol.103
Number (no) 149
Page pp.pp.-
#Pages 6
Date of Issue