Presentation 2003/6/20
XAFS Study of HfSiO_x thin films
Yasushi UEHARA, Kazumasa KAWASE, Junichi TSUCHIMOTO, Teruo SHIBANO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) XAFS study was applied to investigate the local structure around hafnium atoms in Hf(Si)O_x thin films. The electron conversion method has revealed to be effective for the measurements of less than 10 nm thick films. We have found that the amount of the first nearest neighbors around Hf atoms are almost the same among HfO_2 powder and thin films, while the signal from the second nearest neighbor atoms of Hf becomes weak for the HfO_x thin films, and it disappears when silicon atoms are added to the film, which implies that the Si added film has neither HfO_2 cluster nor HfSiO_4 cluster.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) High-k gate dielectrics / gate dielectrics / HfO_2 / HfSiO_x / amorphous / XAFS / SPring-8 / coordination number
Paper # SDM2003-71
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Conference Information
Committee SDM
Conference Date 2003/6/20(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) XAFS Study of HfSiO_x thin films
Sub Title (in English)
Keyword(1) High-k gate dielectrics
Keyword(2) gate dielectrics
Keyword(3) HfO_2
Keyword(4) HfSiO_x
Keyword(5) amorphous
Keyword(6) XAFS
Keyword(7) SPring-8
Keyword(8) coordination number
1st Author's Name Yasushi UEHARA
1st Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Co.()
2nd Author's Name Kazumasa KAWASE
2nd Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Co.
3rd Author's Name Junichi TSUCHIMOTO
3rd Author's Affiliation Process Development Division, Renascence Technology Co.
4th Author's Name Teruo SHIBANO
4th Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Co.
Date 2003/6/20
Paper # SDM2003-71
Volume (vol) vol.103
Number (no) 149
Page pp.pp.-
#Pages 5
Date of Issue