| Presentation | 2003/6/20 ESR observation of interface defects between Si and gate insulator as well as of film defects in gate insulators Satoshi YAMASAKI, Wataru FUTAKO, Norikazu MIZUOCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Information about the interface defect between Si and SiO_2, and about the defect of HfO, film, high-k materials, has been obtained by electron spin resonance (ESR). It has been clarified that almost the same number of interface defects as a bulk SiO_2 case is created by Si oxidation with a couple of layers. It suggests that the interface defects are not created by macroscopic stress, but by the microscopic chemical reaction of Si oxidation. Defects in HfO_2 films have been first detected by ESR. It is suggested that large number of defect states exists in high-k materials. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | high-k / SiO_2 / electron spin resonance / defect |
| Paper # | SDM2003-69 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/6/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ESR observation of interface defects between Si and gate insulator as well as of film defects in gate insulators |
| Sub Title (in English) | |
| Keyword(1) | high-k |
| Keyword(2) | SiO_2 |
| Keyword(3) | electron spin resonance |
| Keyword(4) | defect |
| 1st Author's Name | Satoshi YAMASAKI |
| 1st Author's Affiliation | Diamond Research Center, AIST() |
| 2nd Author's Name | Wataru FUTAKO |
| 2nd Author's Affiliation | Diamond Research Center, AIST |
| 3rd Author's Name | Norikazu MIZUOCHI |
| 3rd Author's Affiliation | Diamond Research Center, AIST : Tsukuba University |
| Date | 2003/6/20 |
| Paper # | SDM2003-69 |
| Volume (vol) | vol.103 |
| Number (no) | 149 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |