| Presentation | 2003/1/31 Suppression of Stress-Induced Voiding in Copper Interconnects Takayuki OSHIMA, Hizuru YAMAGUCHI, Hideo AOKI, Tatsuyuki SAITO, Kensuke ISHIKAWA, Kenji HINODE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied stress-induced voiding of vias in Cu interconnects at the temperature lower than 250℃ and found two different voiding modes. One mode occurs inside a via having wide wire above it, and this mode can be suppressed by optimizing the via shape and the via-cleaning process. The other mode occurs under a via having wide wire below it, and this mode can be suppressed by increasing the Cu grain size, decreasing stress of Cu and improving the adhesion of the barrier metal with Cu. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | copper interconnects / vias / stress migration / stress induced voiding / wide wires |
| Paper # | SDM2002-242 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression of Stress-Induced Voiding in Copper Interconnects |
| Sub Title (in English) | |
| Keyword(1) | copper interconnects |
| Keyword(2) | vias |
| Keyword(3) | stress migration |
| Keyword(4) | stress induced voiding |
| Keyword(5) | wide wires |
| 1st Author's Name | Takayuki OSHIMA |
| 1st Author's Affiliation | Device Development Center, Hitachi, Ltd.() |
| 2nd Author's Name | Hizuru YAMAGUCHI |
| 2nd Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 3rd Author's Name | Hideo AOKI |
| 3rd Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 4th Author's Name | Tatsuyuki SAITO |
| 4th Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 5th Author's Name | Kensuke ISHIKAWA |
| 5th Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 6th Author's Name | Kenji HINODE |
| 6th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| Date | 2003/1/31 |
| Paper # | SDM2002-242 |
| Volume (vol) | vol.102 |
| Number (no) | 637 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |