| Presentation | 2003/1/31 Time-Dependent Dielectric-Constant Increase (TDDI) of Low-k Materials under Electric-Field Stress Daisuke RYUZAKI, Takeshi ISHIDA, Takeshi FURUSAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The stability of low-k materials against electric-field stress was investigated. The k-values of low-k materials were found to increase sharply prior to dielectric breakdown during bias-temperature stress (BTS) tests. This phenomenon, defined as the time-dependent dielectric-constant increase (TDDI), was evaluated for several low-k materials having k-values of 2.3-3.2. To estimate the TDDI effect under a practical operating condition of LSIs, the TDDI lifetimes and the k-value increases were measured for various electric fields and extrapolated to a practical electric field of 0.2 MV/cm. The extrapolated values ranged from 30 days to l,000 years for the TDDI lifetimes and from 0%to 23% for the k-value increases, respectively. Considering the extrapolated results, we proposed the following TDDI criteria : (1) TDDI lifetime should be longer than 10 years, or (2) k-value increase should be less than 5%. These criteria were used successfully to identify those low-k materials that show high stability against electric-field stress. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Low-k / TDDI / Dielectric constant / Lifetime / Reliability |
| Paper # | SDM2002-240 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Time-Dependent Dielectric-Constant Increase (TDDI) of Low-k Materials under Electric-Field Stress |
| Sub Title (in English) | |
| Keyword(1) | Low-k |
| Keyword(2) | TDDI |
| Keyword(3) | Dielectric constant |
| Keyword(4) | Lifetime |
| Keyword(5) | Reliability |
| 1st Author's Name | Daisuke RYUZAKI |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
| 2nd Author's Name | Takeshi ISHIDA |
| 2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 3rd Author's Name | Takeshi FURUSAWA |
| 3rd Author's Affiliation | Semiconductor and Integrated Circuits Division, Hitachi, Ltd. |
| Date | 2003/1/31 |
| Paper # | SDM2002-240 |
| Volume (vol) | vol.102 |
| Number (no) | 637 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |