| Presentation | 2003/1/31 Low-k Organic Film In-situ surface-modification etching technology for the Cu/Low-k interconncects H. OHTAKE, S. SAITO, M. TADA, Y. HARADA, T. ONODERA, Y. HAYASHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The 0.36μm pitched (0.18μmφ) Cu/organic low-k dual damascene interconnects (DDI) was successfully obtained by insitu surface modification etching technology. We found that the sidewall of low-k was modified to the fluorinated carbon nitride (FCN) during the plasma etching using N_2-based plasma with highly molecular weight fluorocarbon gas. The fluorocarbon polymer deposites on the sidewall of low-k after etching,however,this polymer is selectively removed by wet-cleaning which causes the FCN surface of low-k. This FCN layer suppresses the Cu diffusion effectively. This stacked structure (Cu/barrier/FCN/low-k) is very tolerant for the barrier deficit. Using these gas chemistries, the Cu/organic low-k dual damascene interconnects are precisely fabricated, which causes higher via yield and reliability than that in the conventional process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Dual damascene interconnect / Organic low-k / Surface modification / Surface protection / Plasma etching / Fluorinated carbon nitride |
| Paper # | SDM2002-239 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-k Organic Film In-situ surface-modification etching technology for the Cu/Low-k interconncects |
| Sub Title (in English) | |
| Keyword(1) | Dual damascene interconnect |
| Keyword(2) | Organic low-k |
| Keyword(3) | Surface modification |
| Keyword(4) | Surface protection |
| Keyword(5) | Plasma etching |
| Keyword(6) | Fluorinated carbon nitride |
| 1st Author's Name | H. OHTAKE |
| 1st Author's Affiliation | Silicon System Research Labs., NEC Corporation() |
| 2nd Author's Name | S. SAITO |
| 2nd Author's Affiliation | Silicon System Research Labs., NEC Corporation |
| 3rd Author's Name | M. TADA |
| 3rd Author's Affiliation | Silicon System Research Labs., NEC Corporation |
| 4th Author's Name | Y. HARADA |
| 4th Author's Affiliation | Silicon System Research Labs., NEC Corporation |
| 5th Author's Name | T. ONODERA |
| 5th Author's Affiliation | Silicon System Research Labs., NEC Corporation |
| 6th Author's Name | Y. HAYASHI |
| 6th Author's Affiliation | Silicon System Research Labs., NEC Corporation |
| Date | 2003/1/31 |
| Paper # | SDM2002-239 |
| Volume (vol) | vol.102 |
| Number (no) | 637 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |