| Presentation | 2003/1/31 Electroless Plating of Copper on Metal-Nitride Diffusion Barriers Initiated by Displacement Reaction Shoso Shingubara, Zenling Wang, Osamu Yaegashi, Hiroyuki Sakaue, Takayuki Takahagi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We found that copper could be deposited by electroless-plating on the surface of metal-nitride barrier films such as TaN and WN without any sputtered Cu seed layer or Pd catalysis adsorption pretreatment. When the metal nitride barrier films were pretreated with proper wet chemical etchings to remove a surface oxygen-rich layer and immersed into an electroless Cu plating solution with a glyoxylic acid reducing agent, the copper was deposited immediately on them. Electroless deposited Cu on Sputtered TaN had good adhesion properties to endure against CMP and the electrical resistivity of 0.42μm damascene interconnection formed by electroless deposition only was 2.1μΩcm. The electrical potential measurements of the barrier layers against the Ag/AgCl reference electrode in the plating solution showed that the reduction oxidation (REDOX) potentials of TaN and WN were lower than that of copper. We also found that the REDOX potential of TiN was higher than that of Cu, and the electroless-plated copper was not d posited on the surface of TiN without catalysis treatment. As a consequence, the deposition mechanism of electroless copper plating on the surfaces of TaN and WN is considered to be the displacement plating reaction between metal-nitrides and copper ions. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Electroless Plating / Cu interconnection / LSI / reduction-oxidation potential |
| Paper # | SDM2002-236 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electroless Plating of Copper on Metal-Nitride Diffusion Barriers Initiated by Displacement Reaction |
| Sub Title (in English) | |
| Keyword(1) | Electroless Plating |
| Keyword(2) | Cu interconnection |
| Keyword(3) | LSI |
| Keyword(4) | reduction-oxidation potential |
| 1st Author's Name | Shoso Shingubara |
| 1st Author's Affiliation | Graduate School of ADSM, Hiroshima University() |
| 2nd Author's Name | Zenling Wang |
| 2nd Author's Affiliation | Graduate School of ADSM, Hiroshima University |
| 3rd Author's Name | Osamu Yaegashi |
| 3rd Author's Affiliation | Graduate School of ADSM, Hiroshima University |
| 4th Author's Name | Hiroyuki Sakaue |
| 4th Author's Affiliation | Graduate School of ADSM, Hiroshima University |
| 5th Author's Name | Takayuki Takahagi |
| 5th Author's Affiliation | Graduate School of ADSM, Hiroshima University |
| Date | 2003/1/31 |
| Paper # | SDM2002-236 |
| Volume (vol) | vol.102 |
| Number (no) | 637 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |