Presentation 2003/1/31
Influences of Si and Low-k Substrates on Antenna Transmission Gain for on-Chip Wireless Interconnects
S. Watanab, A.B.M. H.Rashid, T. Kikkawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Influences of silicon substrates, metal ground and low-k substrates on the transmission gain of dipole antennas fabricated on a silicon chip were investigated. It is found that the antenna transmission gain on a metal ground decreased when the thickness of silicon substrate decreased. This is because the electromagnetic field radiated by the antenna depends on the distance and must satisfy the far-field solution to transmit the radiated power. On the other hand. The antenna transmission gain on a low-k substrate did not depend on the silicon substrate thickness because the inserted low-k substrate with a thickness of 2.6 mm could satisfy the far-field condition. Consequently, the antenna transmission gain could be improved by inserting a low-k substrate between a silicon substrate and a metal ground plane.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Wireless Interconnects / Integrated Antennas / transmission gain / Si substrate thickness / low-k substrate
Paper # SDM2002-232
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Committee SDM
Conference Date 2003/1/31(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Influences of Si and Low-k Substrates on Antenna Transmission Gain for on-Chip Wireless Interconnects
Sub Title (in English)
Keyword(1) Wireless Interconnects
Keyword(2) Integrated Antennas
Keyword(3) transmission gain
Keyword(4) Si substrate thickness
Keyword(5) low-k substrate
1st Author's Name S. Watanab
1st Author's Affiliation Research Center for Nanodevices and Systems, Hiroshima University()
2nd Author's Name A.B.M. H.Rashid
2nd Author's Affiliation Research Center for Nanodevices and Systems, Hiroshima University
3rd Author's Name T. Kikkawa
3rd Author's Affiliation Research Center for Nanodevices and Systems, Hiroshima University
Date 2003/1/31
Paper # SDM2002-232
Volume (vol) vol.102
Number (no) 637
Page pp.pp.-
#Pages 6
Date of Issue