Presentation | 2003/1/31 Parastic Resistance Modeling of Spiral Inductors on High-resistive SOI Substrate Tatsuji NISHIJIMA, Yoshiyuki SHIMIZU, Hideki SHIMA, Toshimasa MATSUOKA, Kenji TANIGUCHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In radio frequency, quarity factor of spiral inductors on high-resistive SOI substrate is higher than that on conventional SOI substrate because of low loss in silicon substrate. The geometory dependence of parastic factors of spiral inductors is investigated to optimize Q. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Spiral Inductor / High-resistive SOI Substrate |
Paper # | SDM2002-230 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2003/1/31(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Parastic Resistance Modeling of Spiral Inductors on High-resistive SOI Substrate |
Sub Title (in English) | |
Keyword(1) | Spiral Inductor |
Keyword(2) | High-resistive SOI Substrate |
1st Author's Name | Tatsuji NISHIJIMA |
1st Author's Affiliation | Faculty of Engineering, Osaka University() |
2nd Author's Name | Yoshiyuki SHIMIZU |
2nd Author's Affiliation | Faculty of Engineering, Osaka University |
3rd Author's Name | Hideki SHIMA |
3rd Author's Affiliation | Faculty of Engineering, Osaka University |
4th Author's Name | Toshimasa MATSUOKA |
4th Author's Affiliation | Faculty of Engineering, Osaka University |
5th Author's Name | Kenji TANIGUCHI |
5th Author's Affiliation | Faculty of Engineering, Osaka University |
Date | 2003/1/31 |
Paper # | SDM2002-230 |
Volume (vol) | vol.102 |
Number (no) | 637 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |