Presentation 2003/1/31
Parastic Resistance Modeling of Spiral Inductors on High-resistive SOI Substrate
Tatsuji NISHIJIMA, Yoshiyuki SHIMIZU, Hideki SHIMA, Toshimasa MATSUOKA, Kenji TANIGUCHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In radio frequency, quarity factor of spiral inductors on high-resistive SOI substrate is higher than that on conventional SOI substrate because of low loss in silicon substrate. The geometory dependence of parastic factors of spiral inductors is investigated to optimize Q.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Spiral Inductor / High-resistive SOI Substrate
Paper # SDM2002-230
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Conference Information
Committee SDM
Conference Date 2003/1/31(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Parastic Resistance Modeling of Spiral Inductors on High-resistive SOI Substrate
Sub Title (in English)
Keyword(1) Spiral Inductor
Keyword(2) High-resistive SOI Substrate
1st Author's Name Tatsuji NISHIJIMA
1st Author's Affiliation Faculty of Engineering, Osaka University()
2nd Author's Name Yoshiyuki SHIMIZU
2nd Author's Affiliation Faculty of Engineering, Osaka University
3rd Author's Name Hideki SHIMA
3rd Author's Affiliation Faculty of Engineering, Osaka University
4th Author's Name Toshimasa MATSUOKA
4th Author's Affiliation Faculty of Engineering, Osaka University
5th Author's Name Kenji TANIGUCHI
5th Author's Affiliation Faculty of Engineering, Osaka University
Date 2003/1/31
Paper # SDM2002-230
Volume (vol) vol.102
Number (no) 637
Page pp.pp.-
#Pages 4
Date of Issue