| Presentation | 2003/1/31 Al CVD Technology using MPA (methylpyrrolidine alane) Manabu Sakamoto, Kazuya Masu, Eri Sugimoto, Jin Il Lee, Masanobu Hatanaka, Yoshikazu Takahashi, Michio Ishikawa, Yuji Furumura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Filling the low resistivity metal aluminum into large-aspect-ratio contact holes is still a important technique employed in the BEOL process of Si ULSI manufacturing. The present work reports the filling capability of CVD-Al/PVD-Al process. In the CVD process, the recently developed material methylpyrrolidine alane (MPA) was used. 0.25μmφ contact holes with an aspect ratio of 4.3 has been successfully filled by CVD-AL/PVD process. The relative reflectivity of Al-CVD/Al-PVD film against Si surface was 215% @480nm. Fourier-Transform Infrared-Spectroscopy (FT-IR) measurements has confirmed that (l)MPA is decomposed into methylpyrrolidine and alane, and (2) the decomposition of alane. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Al-CVD / methylpyrrolidine alane / FT-IR / Contact |
| Paper # | SDM2002-227 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al CVD Technology using MPA (methylpyrrolidine alane) |
| Sub Title (in English) | |
| Keyword(1) | Al-CVD |
| Keyword(2) | methylpyrrolidine alane |
| Keyword(3) | FT-IR |
| Keyword(4) | Contact |
| 1st Author's Name | Manabu Sakamoto |
| 1st Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology() |
| 2nd Author's Name | Kazuya Masu |
| 2nd Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology |
| 3rd Author's Name | Eri Sugimoto |
| 3rd Author's Affiliation | Institute for Semiconductor Technologies, ULVAC Inc. |
| 4th Author's Name | Jin Il Lee |
| 4th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC Inc. |
| 5th Author's Name | Masanobu Hatanaka |
| 5th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC Inc. |
| 6th Author's Name | Yoshikazu Takahashi |
| 6th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC Inc. |
| 7th Author's Name | Michio Ishikawa |
| 7th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC Inc. |
| 8th Author's Name | Yuji Furumura |
| 8th Author's Affiliation | Philbridge |
| Date | 2003/1/31 |
| Paper # | SDM2002-227 |
| Volume (vol) | vol.102 |
| Number (no) | 637 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |