| Presentation | 2002/11/22 Evaluation of carrier profiles in the extension region of sub-100nm MOSFETs Hidenobu FUKUTOME, Takayuki AOYAMA, Hiroshi ARIMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Using STM, we directly observed a cross-section of a nanoscale MOSFET structure and found a tail region with low carrier concentration in the extension region of the MOSFETs. The tail region was spreading in the horizontal direction along the gate oxide layer. The results of inverse modeling from the electric properties of the MOSFETs support the idea that such a tail region dose exist. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / nanoscale / carrier profile / STM / inverse modeling / anomalous diffusion |
| Paper # | SDM2002-206 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of carrier profiles in the extension region of sub-100nm MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | nanoscale |
| Keyword(3) | carrier profile |
| Keyword(4) | STM |
| Keyword(5) | inverse modeling |
| Keyword(6) | anomalous diffusion |
| 1st Author's Name | Hidenobu FUKUTOME |
| 1st Author's Affiliation | FUJITSU LABORATORIES LTD.() |
| 2nd Author's Name | Takayuki AOYAMA |
| 2nd Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 3rd Author's Name | Hiroshi ARIMOTO |
| 3rd Author's Affiliation | FUJITSU LIMITED |
| Date | 2002/11/22 |
| Paper # | SDM2002-206 |
| Volume (vol) | vol.102 |
| Number (no) | 489 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |