Presentation | 2002/10/22 Theoretical Studies of Electronic Conductivity of Semiconductor Materials Toshiyuki YOKOSUKA, Naoyuki ISODA, Katsumi SASATA, Tomonori KUSAGAYA, Ryuji MIURA, Akira ENDOU, Momoji KUBO, Akira IMAMURA, Hidehiko YABUHARA, Nobuaki MAKINO, Akira MIYAMOTO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | TiN film has widely been employed as a diffusion barrier layer in semiconductor devices due to its excellent barrier properties. However, recent reports indicate the presence of impurities such as TiO and TiON on the surface, which greatly affect the performance of the devices. The effect of such impurities on the electronic conductivity is not yes understood clearly. In order to understand the influence of these impurity materials on the electronic conductivity of TiN, in this investigation, we performed a systematic study on the band structure of TiN, TiO and TiON by our newly developed accelerated quantum chemical molecular dynamics program "Colors ". |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | TiN / Accelerated Quantum Chemical Molecular Dynamics Method / Electronic Conductivity |
Paper # | SDM2002-200 |
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Committee | SDM |
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Conference Date | 2002/10/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Theoretical Studies of Electronic Conductivity of Semiconductor Materials |
Sub Title (in English) | |
Keyword(1) | TiN |
Keyword(2) | Accelerated Quantum Chemical Molecular Dynamics Method |
Keyword(3) | Electronic Conductivity |
1st Author's Name | Toshiyuki YOKOSUKA |
1st Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University() |
2nd Author's Name | Naoyuki ISODA |
2nd Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
3rd Author's Name | Katsumi SASATA |
3rd Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
4th Author's Name | Tomonori KUSAGAYA |
4th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
5th Author's Name | Ryuji MIURA |
5th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
6th Author's Name | Akira ENDOU |
6th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
7th Author's Name | Momoji KUBO |
7th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
8th Author's Name | Akira IMAMURA |
8th Author's Affiliation | Department of Mathematics, Faculty of Engineering, Hiroshima Kokusai Gakuin University |
9th Author's Name | Hidehiko YABUHARA |
9th Author's Affiliation | Toshiba Corporation, Corporate Manufacturing Engineering Center |
10th Author's Name | Nobuaki MAKINO |
10th Author's Affiliation | Toshiba Corporation, Corporate Manufacturing Engineering Center |
11th Author's Name | Akira MIYAMOTO |
11th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University:New Industry Creation Hatchery Center, Tohoku University |
Date | 2002/10/22 |
Paper # | SDM2002-200 |
Volume (vol) | vol.102 |
Number (no) | 416 |
Page | pp.pp.- |
#Pages | 3 |
Date of Issue |