Presentation 2002/10/22
Theoretical Studies of Electronic Conductivity of Semiconductor Materials
Toshiyuki YOKOSUKA, Naoyuki ISODA, Katsumi SASATA, Tomonori KUSAGAYA, Ryuji MIURA, Akira ENDOU, Momoji KUBO, Akira IMAMURA, Hidehiko YABUHARA, Nobuaki MAKINO, Akira MIYAMOTO,
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Abstract(in English) TiN film has widely been employed as a diffusion barrier layer in semiconductor devices due to its excellent barrier properties. However, recent reports indicate the presence of impurities such as TiO and TiON on the surface, which greatly affect the performance of the devices. The effect of such impurities on the electronic conductivity is not yes understood clearly. In order to understand the influence of these impurity materials on the electronic conductivity of TiN, in this investigation, we performed a systematic study on the band structure of TiN, TiO and TiON by our newly developed accelerated quantum chemical molecular dynamics program "Colors ".
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TiN / Accelerated Quantum Chemical Molecular Dynamics Method / Electronic Conductivity
Paper # SDM2002-200
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Committee SDM
Conference Date 2002/10/22(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Theoretical Studies of Electronic Conductivity of Semiconductor Materials
Sub Title (in English)
Keyword(1) TiN
Keyword(2) Accelerated Quantum Chemical Molecular Dynamics Method
Keyword(3) Electronic Conductivity
1st Author's Name Toshiyuki YOKOSUKA
1st Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University()
2nd Author's Name Naoyuki ISODA
2nd Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
3rd Author's Name Katsumi SASATA
3rd Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
4th Author's Name Tomonori KUSAGAYA
4th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
5th Author's Name Ryuji MIURA
5th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
6th Author's Name Akira ENDOU
6th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
7th Author's Name Momoji KUBO
7th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
8th Author's Name Akira IMAMURA
8th Author's Affiliation Department of Mathematics, Faculty of Engineering, Hiroshima Kokusai Gakuin University
9th Author's Name Hidehiko YABUHARA
9th Author's Affiliation Toshiba Corporation, Corporate Manufacturing Engineering Center
10th Author's Name Nobuaki MAKINO
10th Author's Affiliation Toshiba Corporation, Corporate Manufacturing Engineering Center
11th Author's Name Akira MIYAMOTO
11th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University:New Industry Creation Hatchery Center, Tohoku University
Date 2002/10/22
Paper # SDM2002-200
Volume (vol) vol.102
Number (no) 416
Page pp.pp.-
#Pages 3
Date of Issue