| Presentation | 2003/8/28 Ohmic Contact Mechanism of Al-Mo Alloy Electrode to n-InP Substrate Mayumi B. TAKEYAMA, Atsushi NOYA, Tamotsu HASHIZUME, Hideki HASEGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated an Al_xMo_<1-x> alloy as an ohmic electrode material to obtain a thermally stable ohmic electrode with low contact resistance. The novel metallization scheme of Al_<0.9>Mo_<0.1>/n-InP demonstrated an ohmic characteristic without regard to annealing. It was found that the ohmic behavior was correlated to the diffusion of Al with Mo into the InP substrate, forming thin AlInP layer at the InP interface. A simple estimation using the model-solid theory predicted a small band discontinuity between InP and the strained AlInP layer. This is one of possible reasons for the observed ohmic characteristics. It was also suggested that Al-Mo bonds forming the Al_<12>Mo intermetallic compound or its precursor proceed the exchange reaction between Al and In atoms into the InP substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP / ohmic contact / Al-Mo alloy / lattice distortion |
| Paper # | R2003-39,ED2003-117 |
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| Conference Information | |
| Committee | R |
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| Conference Date | 2003/8/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ohmic Contact Mechanism of Al-Mo Alloy Electrode to n-InP Substrate |
| Sub Title (in English) | |
| Keyword(1) | InP |
| Keyword(2) | ohmic contact |
| Keyword(3) | Al-Mo alloy |
| Keyword(4) | lattice distortion |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Atsushi NOYA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Tamotsu HASHIZUME |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | Hideki HASEGAWA |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2003/8/28 |
| Paper # | R2003-39,ED2003-117 |
| Volume (vol) | vol.103 |
| Number (no) | 275 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |