| Presentation | 2003/8/28 Degradation mechanism of AlGaAs/InGaAs PHEMT under large signal operation : Surface degradation under high electric field Takayuki HISAKA, Yoichi NOGAMI, Hajime SASAKI, Atushi HASUIKE, Naohito YOSHIDA, Kazuo HAYASHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have studied the degradation mechanism of AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) under large signal operation. The degradation of output power during large signal operation is accelerated by applying higher drain voltage (Vd) and temperature. Deteriorated devices show the decrease of maximum drain current (Imax) around knee voltage (Vk) and the increase of drain resistance (Rd). Cross-sectional transmission electron microscopy (TEM) images reveal the damaged recess surface at the drain side. In the deteriorated region, a significant amount of oxygen is detected by using energy dispersive x-ray spectroscopy (EDX) analysis. The formation of damaged region leads to reduce the carrier density resulting in decreased Imax and increased Rd. The electrochemical reaction expected to be enhanced by temperature, electric field, and oxygen or humidity. By introducing a buried gate structure, we can successfully improve the reliability of the PHEMT. This result allows highly reliable RF operation with less than 0.2dB reduction of the output power during 1000hr with Vd=7V at Ta=85℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaAs-InGaAs pHEMT / Surface degradation / Reliability / Corrosion / buried gate |
| Paper # | R2003-38,ED2003-116 |
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| Conference Information | |
| Committee | R |
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| Conference Date | 2003/8/28(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Degradation mechanism of AlGaAs/InGaAs PHEMT under large signal operation : Surface degradation under high electric field |
| Sub Title (in English) | |
| Keyword(1) | AlGaAs-InGaAs pHEMT |
| Keyword(2) | Surface degradation |
| Keyword(3) | Reliability |
| Keyword(4) | Corrosion |
| Keyword(5) | buried gate |
| 1st Author's Name | Takayuki HISAKA |
| 1st Author's Affiliation | High Frequency & Optical semiconductor div. Mitsubishi Electric Corporation() |
| 2nd Author's Name | Yoichi NOGAMI |
| 2nd Author's Affiliation | High Frequency & Optical semiconductor div. Mitsubishi Electric Corporation |
| 3rd Author's Name | Hajime SASAKI |
| 3rd Author's Affiliation | High Frequency & Optical semiconductor div. Mitsubishi Electric Corporation |
| 4th Author's Name | Atushi HASUIKE |
| 4th Author's Affiliation | High Frequency & Optical semiconductor div. Mitsubishi Electric Corporation |
| 5th Author's Name | Naohito YOSHIDA |
| 5th Author's Affiliation | High Frequency & Optical semiconductor div. Mitsubishi Electric Corporation |
| 6th Author's Name | Kazuo HAYASHI |
| 6th Author's Affiliation | High Frequency & Optical semiconductor div. Mitsubishi Electric Corporation |
| Date | 2003/8/28 |
| Paper # | R2003-38,ED2003-116 |
| Volume (vol) | vol.103 |
| Number (no) | 275 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |