| Presentation | 2003/8/28 Reliability on InGaAs/InP HBTs with InP Passivation Structure Ryuji YAMABI, Kenji KOTANI, Takeshi KAWASAKI, Masaki YANAGISAWA, Seiji YAEGASSI, Hiroshi YANO, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated InGaAs/InP HBTs with an InP passivation structure and evaluated reliability. Life tests of the HBTs under a collector current density of 100kA/cm^2 were carried out at junction temperatures of 255℃ and 280℃. And also the tests about collector current dependence were done. The HBTs have shown a low emitter-base leakage current and stable characteristics in the life tests compared with HBTs without the InP passivation structure. The variations of current gain and turn-on voltage at a collector current density of 100kA/cm^2 are within 7% and 1%, respectively, after 4,411 hours in the life test of 255℃. We have obtained the activation energy of 1.5 eV, current acceleration factor of 1.3, and the mean time to failure of 5 x 10^6 hours at a junction temperature of 150℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP / InGaAs / HBT / Heterojunction Bipolar Transistor / Reliability |
| Paper # | R2003-37,ED2003-115 |
| Date of Issue |
| Conference Information | |
| Committee | R |
|---|---|
| Conference Date | 2003/8/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Reliability(R) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reliability on InGaAs/InP HBTs with InP Passivation Structure |
| Sub Title (in English) | |
| Keyword(1) | InP |
| Keyword(2) | InGaAs |
| Keyword(3) | HBT |
| Keyword(4) | Heterojunction Bipolar Transistor |
| Keyword(5) | Reliability |
| 1st Author's Name | Ryuji YAMABI |
| 1st Author's Affiliation | Transmission Device R & D Laboratories, Sumitomo Electric Industries, Ltd.() |
| 2nd Author's Name | Kenji KOTANI |
| 2nd Author's Affiliation | Transmission Device R & D Laboratories, Sumitomo Electric Industries, Ltd. |
| 3rd Author's Name | Takeshi KAWASAKI |
| 3rd Author's Affiliation | Transmission Device R & D Laboratories, Sumitomo Electric Industries, Ltd. |
| 4th Author's Name | Masaki YANAGISAWA |
| 4th Author's Affiliation | Transmission Device R & D Laboratories, Sumitomo Electric Industries, Ltd. |
| 5th Author's Name | Seiji YAEGASSI |
| 5th Author's Affiliation | Transmission Device R & D Laboratories, Sumitomo Electric Industries, Ltd. |
| 6th Author's Name | Hiroshi YANO |
| 6th Author's Affiliation | Transmission Device R & D Laboratories, Sumitomo Electric Industries, Ltd. |
| Date | 2003/8/28 |
| Paper # | R2003-37,ED2003-115 |
| Volume (vol) | vol.103 |
| Number (no) | 275 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |