| Presentation | 2003/12/19 A Ku-Band High Efficiency High Power Internal-Matched GaAs FET K MORI, H OHTSUKA, S TSUJI, Y KOASHI, Y SAKAI, K SEINO, N SUEMATSU, T YAKAGI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ku-band high efficiency high power internal-matched FET has been developed by using the large signal FET model including the thermal model. In order to achieve high efficiency and high gain in addition to high power the optimum impedances at each temperature are obtained by using the extracted large signal FET model. In order to achieve high gain, 12 FET cells on a single chip are divided four parts of three FET cells and are matched respectively. The characteristic impedances of the input impedance transformer are optimized to achieve high gain in broadband. The developed Ku-band internal-matched FET achieves PldB of 41.8dBm(15W) and PAE of 37.5% at 14.2GHz and base temperture Tb of 40degC and also achieves PldB over 41.4dBm and PAE over 33.8% at Tb from -15 to lOOdegC. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Microwave / Amplifier / Large signal model / Thermal model / Internally-Matched FET / HFET |
| Paper # | MW2003-216 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2003/12/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Ku-Band High Efficiency High Power Internal-Matched GaAs FET |
| Sub Title (in English) | |
| Keyword(1) | Microwave |
| Keyword(2) | Amplifier |
| Keyword(3) | Large signal model |
| Keyword(4) | Thermal model |
| Keyword(5) | Internally-Matched FET |
| Keyword(6) | HFET |
| 1st Author's Name | K MORI |
| 1st Author's Affiliation | Mitsubishi Electric Corporation() |
| 2nd Author's Name | H OHTSUKA |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation |
| 3rd Author's Name | S TSUJI |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation |
| 4th Author's Name | Y KOASHI |
| 4th Author's Affiliation | Miyoshi Electronics Corporation |
| 5th Author's Name | Y SAKAI |
| 5th Author's Affiliation | Mitsubishi Electric Corporation |
| 6th Author's Name | K SEINO |
| 6th Author's Affiliation | Mitsubishi Electric Corporation |
| 7th Author's Name | N SUEMATSU |
| 7th Author's Affiliation | Mitsubishi Electric Corporation |
| 8th Author's Name | T YAKAGI |
| 8th Author's Affiliation | Mitsubishi Electric Corporation |
| Date | 2003/12/19 |
| Paper # | MW2003-216 |
| Volume (vol) | vol.103 |
| Number (no) | 534 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |