| 講演名 | 2003/11/11 Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier , |
|---|---|
| PDFダウンロードページ | PDFダウンロードページへ |
| 抄録(和) | |
| 抄録(英) | This paper describes the investigation of the electrical memory effect using the harmonic balance technique (HBT). Using the HBT, the inter-modulation distortion (IMD) of a GaAs FET amplifier was estimated, including the modulation of the drain current by the beat frequency component of the voltage induced in the bias circuit. The dependencies of the IMD on the circuit parameters were determined under the conditions under which the memory effect occurs. The estimated IMD suggests that the memory effect can be suppressed by using an amplifier with a band center frequency that is higher than the frequency range of the input signal. The IMD was measured using an amplifier in the 2-GHz band. The frequency dependence of the measured IMD was found to be very complex as a result of the rapid and complicated variations in the phases of the impedance of the bias circuit. However, the correspondence of the phase variation to the asymmetry of the IMD supports the validity of the model adopted for the calculation. These complex variations in the phase make it difficult to suppress the memory effect over the required frequency range. Reducing the phase variation in the impedance of the bias circuit makes it possible to suppress the memory effect by selecting the position of the amplifier band relative to the frequency range of the input signal. |
| キーワード(和) | |
| キーワード(英) | |
| 資料番号 | NW2003-206 |
| 発行日 |
| 研究会情報 | |
| 研究会 | MW |
|---|---|
| 開催期間 | 2003/11/11(から1日開催) |
| 開催地（和） | |
| 開催地（英） | |
| テーマ（和） | |
| テーマ（英） | |
| 委員長氏名（和） | |
| 委員長氏名（英） | |
| 副委員長氏名（和） | |
| 副委員長氏名（英） | |
| 幹事氏名（和） | |
| 幹事氏名（英） | |
| 幹事補佐氏名（和） | |
| 幹事補佐氏名（英） | |
| 講演論文情報詳細 | |
| 申込み研究会 | Microwaves (MW) |
|---|---|
| 本文の言語 | ENG |
| タイトル（和） | |
| サブタイトル（和） | |
| タイトル（英） | Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier |
| サブタイトル（和） | |
| キーワード(1)（和/英） | |
| 第 1 著者 氏名（和/英） | / Takeshi Takano |
| 第 1 著者 所属（和/英） | Fujitsu Laboratories YSP R&D Center |
| 発表年月日 | 2003/11/11 |
| 資料番号 | NW2003-206 |
| 巻番号（vol） | vol.103 |
| 号番号（no） | 439 |
| ページ範囲 | pp.- |
| ページ数 | 7 |
| 発行日 | |