| Presentation | 2003/11/11 A Broad-Band High-Efficiency C-Band Internally-Matched FET H. Ohtsuka, K. Mori, H. Yukawa, Y. Minamide, Y. Kittaka, T. Tsunoda, S. Ogura, T. Takagi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we present a broad-band and high-efficiency C-band internally-matched FET. Optimum impedances at fundamental and second harmonic frequencies were accurately estimated from source- and load-pull simulation by using an accurate large signal FET model. The matching circuits were designed to realize the optimum impedances in a broad-band. The large signal FET model is based on Angelov model, which accurately predicts I-V characteristics of FETs. The model parameters were extracted for a unit cell FET with a small gate width. We scaled up the unit cell FET model to 1 chip FET model with a wide gate width, accounting for increase of source inductance by sharing via holes. The developed internally-matched FET has achieved power-added efficiency (PAE) of over 65 % across 300MHz bandwidth. It is confirmed that internally-matched FETs can be effectively designed by using the large signal FET model. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | microwave / amplifier / large signal model / internally-matched FET |
| Paper # | NW2003-205 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2003/11/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Broad-Band High-Efficiency C-Band Internally-Matched FET |
| Sub Title (in English) | |
| Keyword(1) | microwave |
| Keyword(2) | amplifier |
| Keyword(3) | large signal model |
| Keyword(4) | internally-matched FET |
| 1st Author's Name | H. Ohtsuka |
| 1st Author's Affiliation | Mitsubishi Electric Corporation() |
| 2nd Author's Name | K. Mori |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation |
| 3rd Author's Name | H. Yukawa |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation |
| 4th Author's Name | Y. Minamide |
| 4th Author's Affiliation | Mitsubishi Electric Corporation |
| 5th Author's Name | Y. Kittaka |
| 5th Author's Affiliation | Mitsubishi Electric Corporation |
| 6th Author's Name | T. Tsunoda |
| 6th Author's Affiliation | Mitsubishi Electric Corporation |
| 7th Author's Name | S. Ogura |
| 7th Author's Affiliation | Mitsubishi Electric Corporation |
| 8th Author's Name | T. Takagi |
| 8th Author's Affiliation | Mitsubishi Electric Corporation |
| Date | 2003/11/11 |
| Paper # | NW2003-205 |
| Volume (vol) | vol.103 |
| Number (no) | 439 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |